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Quantum transport theory for nanoelectronics devices

Quantum transport theory for nanoelectronics devices
纳米电子器件的量子输运理论
批准号:
109516-2006
负责人:
Guo, Hong
金额:
$6.68万
依托单位:
依托单位国家:
加拿大
项目类别:
Discovery Grants Program - Individual
财政年份:
2007
资助国家:
加拿大
项目状态:
已结题
起止时间:
2007-01-01 至 2008-12-31

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中文摘要
翻译
这项发现补助金申请中包含的工作解决了纳米电子器件量子输运理论中几个困难但非常重要的问题。这项工作的中心主题是现实纳米结构中的电荷和自旋量子输运。我们将使用,扩展,并进一步开发第一原理形式主义和相关的数值工具,从原子的角度分析纳米电子系统中的非线性和非平衡电荷/自旋输运。我们的技术考虑到了器件结构的材料和化学细节,并允许在不依赖于任何现象学参数的情况下预测器件特性。因此,可以进行定量预测。利用这些方法,我们将研究纳米尺度器件中量子输运的许多重要问题,包括分子自旋电子学、自旋电流物理、磁性隧道结、电压脉冲驱动的瞬态电流、高频量子输运性质、分子电子器件、非平衡态纳米电子器件中电子-声子散射的计算、半导体器件的超大尺度模拟、和量子点中的电子相关性。由于我们的理论是微观的,器件在外加偏压和电流作用下的原子结构特性将被考虑在内。这些问题是纳米电子器件物理学的中心,我们的工作将为这个非常重要和前瞻性的研究领域提供持续的实质性影响。我们的研究计划为学生和博士后提供了一个良好的培训环境,因为它的跨学科性质,涉及量子物理,化学和材料科学。 学生使用和开发的理论方法和建模工具是最先进的。他们的研究将通过我们与麦吉尔和其他地方实验室的密切关系和合作进一步丰富。
英文摘要
The work contained in this discovery grant application tackles several difficult but very important issues of quantum transport theory for nanoelectronic devices. The central theme of the work is charge and spin quantum transport in realistic nanostructures. We will use, extend, and further develop first principles formalism and associated numerical tools for analyzing nonlinear and non-equilibrium charge/spin transport in nanoelectronic systems from atomic point of view. Our techniques take into account the material and chemical details of the device structure, and allow predictions of device characteristics without relying on any phenomenological parameter. Quantitative predictions can therefore be made. Using these methods, we will investigate many important issues of quantum transport in nano-scale devices, including molecular spintronics, spin current physics, magnetic tunnel junctions, transient current driven by voltage pulses, quantum transport properties at high frequency, molecular electronic devices, calculations of electron-phonon scattering in nanoelectronic devices at non-equilibrium, very large scale modeling of semiconductor devices, and electron correlation in quantum dots. Because our theory is microscopic, atomic structural properties of devices under external bias and during current flow will be taken into account. These issues are at the center of nanoelectronic device physics and our work will provide continued substantial impact to this very important and forward looking research field. Our research program provides an excellent training environment for students and postdocs due to its inter-discipline nature, involving quantum physics, chemistry, and materials science.  The theoretical methods and modeling tools to be used and developed by students are state-of-the-art. Their study will be further enriched by our close relationship and collaboration with experimental labs in McGill and elsewhere.
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Theory and modeling of emerging electronic systems
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  • 项目类别:
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  • 资助金额:
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  • 财政年份:
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  • 负责人:
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  • 依托单位:
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  • 项目类别:
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  • 资助金额:
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  • 负责人:
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  • 依托单位:
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    RGPIN-2016-04191
  • 项目类别:
    Discovery Grants Program - Individual
  • 资助金额:
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  • 财政年份:
    2020
  • 负责人:
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  • 依托单位:
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  • 批准号:
    RGPIN-2016-04191
  • 项目类别:
    Discovery Grants Program - Individual
  • 资助金额:
    $6.92万
  • 财政年份:
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  • 负责人:
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