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Room Temperature Magnetoelectric & Multiferroic Films and Composites for novel Devices

Room Temperature Magnetoelectric & Multiferroic Films and Composites for novel Devices
常温磁电
批准号:
261662-2013
负责人:
Pignolet, Alain
金额:
$2.99万
依托单位国家:
加拿大
项目类别:
Discovery Grants Program - Individual
财政年份:
2014
资助国家:
加拿大
项目状态:
已结题
起止时间:
2014-01-01 至 2015-12-31

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中文摘要
翻译
下一代小型化设备将越来越依赖于“智能材料”,这种材料具有神奇的能力,可以通过以可逆的方式突然改变其特性来响应外部刺激。多铁性,同时表现出磁性和铁电有序,是潜在的这样的智能材料。虽然磁性有序和铁电性之间的相互作用是目前凝聚态物理中尚未回答的基本问题之一,但同时出现这两个有序的情况很少见,而且经常发生在低温下。近年来,在室温下具有良好多铁性的薄膜和纳米结构材料的出现,为将多铁性/磁电性材料应用于新型集成器件开辟了道路,在传感、能量转换以及用于通信的光子学和高频电子学等领域。
英文摘要
The next generation of miniaturized devices will increasingly rely on "smart materials", materials with the uncanny ability to respond to an external stimulus by abruptly changing their properties in a reversible manner. Multiferroics, exhibiting at once, a magnetic and a ferroelectric ordering are potentially such smart materials. While the interplay between magnetic ordering and ferroelectricity in these compounds is presently one of the unanswered fundamental questions in condensed matter physics, the occurrence of both orders simultaneously is rare and very often occurs at low temperature. The recent emergence of thin films and nanostructures of materials with good multiferroic properties at room temperature has been a turning point opening the way for using multiferroics/magnetoelectrics into novel integrated devices, in areas such as sensing, energy conversion, as well as photonics and high-frequency electronics for telecommunication.
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EPITAXY, INTERFACES, AND DOMAIN BOUNDARIES OF ROOM TEMPERATURE MULTIFERROIC MAGNETOELECTRIC FILMS AND HETEROSTRUCTURES
EPITAXY, INTERFACES, AND DOMAIN BOUNDARIES OF ROOM TEMPERATURE MULTIFERROIC MAGNETOELECTRIC FILMS AND HETEROSTRUCTURES
EPITAXY, INTERFACES, AND DOMAIN BOUNDARIES OF ROOM TEMPERATURE MULTIFERROIC MAGNETOELECTRIC FILMS AND HETEROSTRUCTURES
EPITAXY, INTERFACES, AND DOMAIN BOUNDARIES OF ROOM TEMPERATURE MULTIFERROIC MAGNETOELECTRIC FILMS AND HETEROSTRUCTURES
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