Analyse fine en champ proche et optimisation de l'effet piézoélectrique de films minces de nitrure d'aluminium synthétisés par pulvérisation.

氮化铝（AlN）是一种具有光学、电介质和声学特性的材料，在许多技术领域都有应用。特别是AlN薄膜作为一种具有损耗低、高频特性好、速度耦合系数高等良好介电性能的压电材料，在高温工作中受到了广泛的关注。近年来，许多研究小组对氮化铝薄膜的生长进行了大量的研究。他们主要关注复杂的薄膜合成技术的发展，通过改变沉积参数来控制首选取向，以及对相关材料科学的理解的实质性提高。Teledyne Dalsa在一些工作中表明，在调整沉积条件的条件下，即使在低温下使用磁控溅射系统，也有可能显著提高薄膜的结晶质量。然而，已经观察到良好的晶体质量并不能系统地导致高压电性能。在这项工作的框架内，我们试图通过大量的局部探针技术（AFM, C-AFM, K-PFM）和压电研究来解决这个问题。

Aluminum nitride (AlN) is a material with application in a number of technological areas owing to its optical, dielectric and acoustic properties. Particularly, as a piezoelectric material with good dielectric properties, such as low losses, good high frequency characteristics, high velocity coupling coefficient, AlN film has received a great deal of attention for high temperature operating. Many research groups have done a tremendous amount of research on AlN film growth in recent years. They mainly focused on the development of sophisticated film-synthesis techniques, controlling the preferred orientation by change of deposition parameters, and substantial improvement in the understanding of the related materials science.Teledyne Dalsa have shown in some works that in condition to tune the deposition conditions, it is possible to improve significantly the crystalline quality of the films even if one use magnetron sputtering system at low temperature. Nevertheless, it has been observed that the good crystalline quality does not lead systematically to high piezoelectric performances. In the frame of this work, we have tried to address this question thanks to a large panel of local probe technic (AFM, C-AFM, K-PFM) and piezoelectric investigations.