压接型IGBT器件功率循环测试方法及失效机理研究

压接型IGBT器件功率循环测试方法和失效机理研究对器件封装可靠性具有重要意义。外部机械压力的引入及多芯片间物理量强耦合作用使得压接型IGBT器件功率循环加速老化机制和失效机理不明确，难以对器件封装进行可靠性评估。本项目紧密围绕压接型IGBT器件封装可靠性的科学问题，以多物理场耦合为切入点、秒级功率循环测试为主线、关键物理量准确量测为基础、有限元仿真分析为手段、基础理论推导为根本，通过电磁学、传热学、结构力学、材料力学和半导体物理学交叉融合，实验量测、数据处理和仿真分析相结合，开展3个方面研究：1）计及压力耦合的功率循环寿命关键因子耦合机制及作用机理，2）考虑并联芯片多物理量耦合作用的加速老化机制和失效机理，3）压接型IGBT器件功率循环加速老化与柔性直流工况等效性，以掌握压接型IGBT器件加速老化机制和失效机理，提出功率循环测试方法，为国产压接型IGBT器件封装可靠性奠定理论和方法基础。

The research on the power cycling test method and failure mechanism of press pack IGBT (PP IGBT) is of great significance to the packaging reliability. The introduction of external clamping force and strong coupling of multi-physics make the power cycling accelerated aging mechanism and failure mechanism of PP IGBT unclear, which is difficult to evaluate its packaging reliability. This project mainly focuses on the scientific issues of PP IGBT. The basic research strategy is based on the multi-physics coupling in PP IGBT, second-cycle level power cycling test, accurate measurement of key parameters, finite element simulation analysis and theoretical derivation. At the same time, the multi-disciplinary integration of electromagnetics, heat transfer, structural mechanics, material mechanics, and semiconductor physics is proposed. Three important issues are researched with experimental measurement, data processing and simulation analysis. 1) The coupling mechanism and interaction mechanism of key factors to power cycling lifetime with the consideration of clamping force, 2) Accelerated power cycling ageing mechanism and failure mechanism considering the multi-physical coupling of parallel chips, and 3) Equivalence of lifetime and failure mechanism between the accelerated power cycling test and flexible HVDC operation condition. The aim is to obtain the accelerated ageing mechanism and failure mechanism of PP IGBT, propose the power cycling test method for PP IGBT and lay a theoretical and method basis for the packaging reliability of PP IGBT.