新型栅极调控负光电导型InAsSb纳米线室温中红外探测器机理研究

InAsSb纳米线光电探测器，因其材料、结构与物理等属性表现出优异的光电特性，在诸多领域有着重要的应用前景，但在室温下其探测波长不能完全覆盖中红外波段，根本原因是表面缺陷态与光电探测机制缺陷造成的。本项目提出研制一种新型栅极调控的负光电导型InAsSb纳米线室温中红外探测器。针对表面问题，拟通过(NH4)2S溶液/Al2O3介质层两步方法对CVD合成的高质量含Sb组分InAsSb纳米线进行钝化，降低表面缺陷态与非辐射复合中心密度，提高纳米线质量。针对探测机制问题，拟采用基于负光电导效应的探测技术来提高器件探测率，增强器件对长波低能量中红外光子的探测能力；并发展新型铁电薄膜栅极调控技术，结合Al2O3介质层作用，通过产生优化的剩余极化电场增强对表面热光生电子的束缚，消除室温对器件性能的破坏性，实质性提高器件的工作温度。本项目研究，为新型高性能纳米线光电探测器的发展提供新思路与新方法。

InAsSb nanowire photodetector has an important application prospect in military and civilian fields due to its excellent photoelectric characteristics in material, structure and physical properties. However, its detection wavelength cannot completely cover the middle infrared band at room temperature, which is fundamentally caused by surface defect state and photodetection mechanism defect. This project intends to develop a novel gate-controlled negative photoconductive InAsSb nanowire room temperature mid-infrared photodetector. To solve the problem of surface defect states, it is proposed to passivate the high-quality Sb-containing InAsSb nanowires synthesized by CVD through (NH4)2S solution/Al2O3 dielectric layer two-step method to reduce surface defect states and non-radiative composite center density and improve the quality of nanowire. In response to the problem of detection mechanism defects, we plan to use the detection technology based on negative photoconductivity to improve the detectivity of the device and enhance the detection ability of the device to longer-wavelength low-energy mid-infrared photons. Meanwhile, the ferroelectric film gate regulation technology is suggested to generate an optimized residual polarization electric field by combining with the action of the Al2O3 dielectric layer, so as to enhance the binding of photogenerated electrons on the surface, eliminate the destructive effect of room temperature on the negative photoconductivity effect, and substantially improve the operating temperature of the device. The research of this project provides new ideas and new methods for the development of new high-performance nanowire photodetectors.