Magnetic-electric behaviors in BiFeO3 films grown on LaNiO3-buffered Si substrate
Magnetic-electric behaviors in BiFeO3 films grown on LaNiO3-buffered Si substrate
复制标题
LaNiO3 缓冲 Si 衬底上生长的 BiFeO3 薄膜的磁电行为
DOI：
10.1063/1.3240327
复制
发表时间：
2009-10
影响因子：
3.2
通讯作者：
C. W. Nan
中科院分区：
文献类型：
--
作者：
Y. Wang;Z. Li;Y. H. Lin;C. W. Nan
采用改进的化学方法在LaNiO_3缓冲硅衬底上生长了不同厚度和不同晶向的BiFeO_3薄膜。在铁电行为中观察到显著的尺寸效应，由于退偏效应和BiFeO_3薄膜的微观结构的综合作用，厚度越厚的薄膜表现出更大的极化值。高分辨电子显微镜显示BiFeO_3薄膜呈现复杂的应变状态，由反平行自旋倾斜引起的净磁矩在较厚的薄膜中无序排列，呈现自旋玻璃态；而在较薄的BiFeO_3薄膜中，无序自旋转变为有序排列的铁磁行为。因此，随着薄膜厚度的变化，存在铁电和磁性行为之间的竞争。此外，在磁场感应电压为3.5VOe左右的BiFeO_3薄膜中观察到了磁电耦合现象。
BiFeO3 films with different thicknesses and crystallographic orientations were grown on LaNiO3-buffered Si substrates via a modified chemical route. Remarkable size effect in ferroelectric behavior was observed with thicker films exhibiting a larger polarization value, due to combined depolarization effect and microstructure of the BiFeO3 films. High resolution transmission electron micrograph revealed a complex strain state in the BiFeO3 films, and the net magnetic moment induced by the canting of the antiparallel spins was arranged in disorder in thicker films, presenting a spin-glass state; while in the thinner BiFeO3 films, the disorder spins turned to be orderly arranged to induce a ferromagnetic behavior. Thus there exists a competition between ferroelectric and magnetic behaviors as film thickness changes. Furthermore, magnetoelectric coupling was observed in the BiFeO3 films with a magnetic-field-induced electrical voltage of around 3.5 μV/Oe.
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通过拉曼光谱和压电力显微镜研究 BiFeO3 薄膜的位点修饰
影响因子：
3.2
作者：
通讯作者：
--
DOI：
10.1107/s0108768190006887
发表时间：
1990-12-01
期刊：
ACTA CRYSTALLOGRAPHICA SECTION B-STRUCTURAL SCIENCE
影响因子：
--
作者：
KUBEL, F;SCHMID, H
通讯作者：
SCHMID, H
影响因子：
3.7
作者：
Ederer, C;Spaldin, NA
通讯作者：
Spaldin, NA
影响因子：
4
作者：
K. Yun;D. Ricinschi;T. Kanashima;M. Okuyama
通讯作者：
K. Yun;D. Ricinschi;T. Kanashima;M. Okuyama
影响因子：
9.4
作者：
Deng, Chaoyong;Zhang, Yi;Nan, Ce-Wen
通讯作者：
Nan, Ce-Wen