Significant improvement of field emission by depositing zinc oxide nanostructures on screen-printed carbon nanotube films
Significant improvement of field emission by depositing zinc oxide nanostructures on screen-printed carbon nanotube films
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通过在丝网印刷碳纳米管薄膜上沉积氧化锌纳米结构显着改善场发射
DOI：
10.1063/1.2195115
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发表时间：
2006-04
期刊：
影响因子：
--
通讯作者：
Q. Wan
中科院分区：
文献类型：
--
作者：
1.Ke Yu;Y. S. Zhang;F. Xu;Q. Li;Z. Q. Zhu;Q. Wan
为了提高丝网印刷碳纳米管薄膜的场发射性能，采用气相传输法在多壁碳纳米管（MWNTs）表面沉积ZnO纳米结构。基于MWNT/ZnO几何结构的综合效应，在0.1μA scincm ~ 2电流密度下，其开启场为1.07V scincm ~ 2，阈值场为1.23V scincm ~ 2，场增强因子为8.2× 10 ~ 3，在MNWT薄膜上生长的ZnO纳米多脚结构得到了均匀的发射图像，发射点密度为105 cm-2。为了研究丝网印刷碳纳米管薄膜的场发射性能，采用气相传输法在多壁碳纳米管（MWNTs）上沉积了ZnO纳米结构。基于多壁碳纳米管/ZnO纳米结构的综合效应，在0.1μA scincm ~ 2的电流密度下，ZnO纳米多脚结构获得了低开启场（~ 10.7V scincm ~ 2）、低阈值场（~ 2.3V scincm ~ 2）、高场增强因子（~ 8.2×103）和均匀的发射图像，发射斑点密度为~ 105 cm-2。
In order to improve the field emission properties of screen-printed carbon nanotube films, ZnO nanostructures were deposited on multiwall carbon nanotubes (MWNTs) using vapor phase transport method. Based on the combined effect of geometrical structure of MWNT/ZnO, a low turn-on field of ∼0.7V∕μm at current density of 0.1μA∕cm2, a low threshold field of ∼2.3V∕μm at current density of 1mA∕cm2, a high field enhancement factor of 8.2×103, and a homogeneous emission image with emission spot density of ∼105cm−2 were obtained from ZnO nanomultipods grown on MNWT film.In order to improve the field emission properties of screen-printed carbon nanotube films, ZnO nanostructures were deposited on multiwall carbon nanotubes (MWNTs) using vapor phase transport method. Based on the combined effect of geometrical structure of MWNT/ZnO, a low turn-on field of ∼0.7V∕μm at current density of 0.1μA∕cm2, a low threshold field of ∼2.3V∕μm at current density of 1mA∕cm2, a high field enhancement factor of 8.2×103, and a homogeneous emission image with emission spot density of ∼105cm−2 were obtained from ZnO nanomultipods grown on MNWT film.
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