Pure Graphene Oxide Vertical p-n Junction with Remarkable Rectification Effect.
Pure Graphene Oxide Vertical p-n Junction with Remarkable Rectification Effect.
复制标题
纯氧化石墨烯垂直p-n结，整流效果显着
DOI：
10.3390/molecules26226849
复制
发表时间：
2021-11-13
期刊：
影响因子：
--
通讯作者：
Chen L
中科院分区：
文献类型：
--
作者：
Fan Y;Wang T;Qiu Y;Yang Y;Pan Q;Zheng J;Zeng S;Liu W;Lou G;Chen L
石墨烯p-n结在光互连和低功耗集成电路等领域有着重要的应用。目前的研究大多是基于化学掺杂等方法制备的横向p-n结。在这里，我们报道了一种新型的纯氧化石墨烯（pGO）垂直p-n结，其不掺杂任何其他元素，而仅控制GO的氧含量。pGO垂直p-n结的I-V曲线显示出显著的整流效应。此外，当密封并储存在PE袋中时，pGO垂直p-n结显示出其整流特性在长期储存六个月内的稳定性。此外，pGO垂直p-n结具有明显的光电响应和各种整流效果与不同的厚度和GO的氧含量，湿度和温度。霍尔效应测试结果表明，rGO是n型半导体;理论计算和研究表明，GO一般是p型半导体，具有带隙，从而形成p-n结。我们的工作提供了一种制备未掺杂的GO垂直p-n结的方法，具有简单、方便和大规模工业化制备等优点。我们的工作在电子和高灵敏度传感器中具有巨大的应用潜力。
Graphene p-n junctions have important applications in the fields of optical interconnection and low–power integrated circuits. Most current research is based on the lateral p-n junction prepared by chemical doping and other methods. Here, we report a new type of pure graphene oxide (pGO) vertical p-n junctions which do not dope any other elements but only controls the oxygen content of GO. The I–V curve of the pGO vertical p–n junction demonstrates a remarkable rectification effect. In addition, the pGO vertical p–n junction shows stability of its rectification characteristic over long-term storage for six months when sealed and stored in a PE bag. Moreover, the pGO vertical p–n junctions have obvious photoelectric response and various rectification effects with different thicknesses and an oxygen content of GO, humidity, and temperature. Hall effect test results show that rGO is an n–type semiconductor; theoretical calculations and research show that GO is generally a p–type semiconductor with a bandgap, thereby forming a p–n junction. Our work provides a method for preparing undoped GO vertical p–n junctions with advantages such as simplicity, convenience, and large–scale industrial preparation. Our work demonstrates great potential for application in electronics and highly sensitive sensors.
登录
查看更多内容
影响因子：
15
作者：
HUMMERS, WS;OFFEMAN, RE
通讯作者：
OFFEMAN, RE
影响因子：
17.1
作者：
Kim, Sung;Shin, Dong Hee;Hwang, Euyheon
通讯作者：
Hwang, Euyheon
影响因子：
16.6
作者：
D'Apuzzo F;Piacenti AR;Giorgianni F;Autore M;Guidi MC;Marcelli A;Schade U;Ito Y;Chen M;Lupi S
通讯作者：
Lupi S
影响因子：
10.9
作者：
Pei, Songfeng;Cheng, Hui-Ming
通讯作者：
Cheng, Hui-Ming
零偏压可见光到近红外水平p-n-p TiO2纳米管掺杂单层石墨烯光电探测器
影响因子：
4.6
作者：
Huang, Zehua;Ji, Chunhui;Wang, Jun
通讯作者：
Wang, Jun