A non-intrusive method for monitoring the degradation of MOSFETs.
A non-intrusive method for monitoring the degradation of MOSFETs.
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一种非侵入式监测 MOSFET 退化的方法
DOI：
10.3390/s140101132
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发表时间：
2014-01-10
期刊：
影响因子：
--
通讯作者：
Li XJ
中科院分区：
文献类型：
--
作者：
Wu LF;Zheng Y;Guan Y;Wang GH;Li XJ
高可靠的嵌入式系统在航空航天、核电、高铁等领域得到了广泛的应用，关系到安全和经济发展。电源的可靠性直接影响到嵌入式系统的安全性，一直是众多电子信息和能源研究的研究热点。在影响供电可靠性的关键因素中，功率模块的退化占据了主导地位。如何动态地判断功率模块的退化状态并预测其剩余使用寿命是关键。为此，提出了一种基于沃尔泰拉级数的MOSFET退化状态在线非侵入式获取方法。该方法利用MOSFET的自驱动信号作为非侵入激励，通过沃尔泰拉级数的频域核提取MOSFET的退化特性。实验结果表明，该方法实现的识别与理论分析吻合较好。
Highly reliable embedded systems have been widely applied in the fields of aerospace, nuclear power, high-speed rail, etc., which are related to security and economic development. The reliability of the power supply directly influences the security of the embedded system, and has been the research focus of numerous electronic information and energy studies. The degradation of power modules occupies a dominant position among the key factors affecting the power supply reliability. How to dynamically determine the degradation state and forecast the remaining useful life of working power modules is critical. Therefore, an online non-intrusive method of obtaining the degradation state of MOSFETs based on the Volterra series is proposed. It uses the self-driving signal of MOSFETs as a non-intrusive incentive, and extracts the degradation characteristics of MOSFETs by the frequency-domain kernel of the Volterra series. Experimental results show that the identification achieved by the method agrees well with the theoretical analysis.
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