Efficient spin current source using a half-Heusler alloy topological semimetal with back end of line compatibility.
Efficient spin current source using a half-Heusler alloy topological semimetal with back end of line compatibility.
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DOI：
10.1038/s41598-022-06325-1
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发表时间：
2022-02-14
影响因子：
4.6
通讯作者：
Hai PN
中科院分区：
文献类型：
--
作者：
Shirokura T;Fan T;Khang NHD;Kondo T;Hai PN
拓扑材料，例如拓扑绝缘体（TI），由于其巨大的自旋霍尔效应，在超低功耗自旋电子器件方面具有巨大的潜力。然而，巨大的自旋霍尔角（θSH > 1）仅限于少数含有有毒元素和低熔点的硫族化物TI，这使得它们在硅后段（BEOL）工艺期间对器件集成具有挑战性。在这里，我们表明，通过使用半赫斯勒合金拓扑半金属 (HHA-TSM) YPtBi，可以实现高达 4.1 的巨大 θSH 和高达 600 °C 的高热预算。我们利用 YPtBi 的巨大自旋霍尔效应演示了 CoPt 薄膜的磁化翻转，电流密度比重金属低一个数量级。由于HHA-TSM包含一组具有极大灵活性的三元拓扑材料，我们的工作为第三代自旋霍尔材料打开了大门，该材料具有高θSH和与BEOL工艺的高兼容性，很容易被业界采用。
Topological materials, such as topological insulators (TIs), have great potential for ultralow power spintronic devices, thanks to their giant spin Hall effect. However, the giant spin Hall angle (θSH > 1) is limited to a few chalcogenide TIs with toxic elements and low melting points, making them challenging for device integration during the silicon Back-End-of-Line (BEOL) process. Here, we show that by using a half-Heusler alloy topological semi-metal (HHA-TSM), YPtBi, it is possible to achieve both a giant θSH up to 4.1 and a high thermal budget up to 600 °C. We demonstrate magnetization switching of a CoPt thin film using the giant spin Hall effect of YPtBi by current densities lower than those of heavy metals by one order of magnitude. Since HHA-TSM includes a group of three-element topological materials with great flexibility, our work opens the door to the third-generation spin Hall materials with both high θSH and high compatibility with the BEOL process that would be easily adopted by the industry.
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影响因子：
16.6
作者：
Liu, Z. K.;Yang, L. X.;Wu, S. -C.;Shekhar, C.;Jiang, J.;Yang, H. F.;Zhang, Y.;Mo, S. -K.;Hussain, Z.;Yan, B.;Felser, C.;Chen, Y. L.
通讯作者：
Chen, Y. L.
影响因子：
3.7
作者：
Hayashi, Masamitsu;Kim, Junyeon;Ohno, Hideo
通讯作者：
Ohno, Hideo
影响因子：
56.9
作者：
Liu, Luqiao;Pai, Chi-Feng;Buhrman, R. A.
通讯作者：
Buhrman, R. A.
影响因子：
8.6
作者：
Liu, Luqiao;Pai, Chi-Feng;Buhrman, R. A.
通讯作者：
Buhrman, R. A.
影响因子：
1.6
作者：
Budhani, Ramesh C.;Higgins, Joshua S.;Paglione, Johnpierre
通讯作者：
Paglione, Johnpierre