Optimizing hydrogen plasma etching process of preferred (110)-textured diamond film
Optimizing hydrogen plasma etching process of preferred (110)-textured diamond film
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优选(110)织构金刚石薄膜的氢等离子体刻蚀工艺优化
DOI：
10.1016/j.surfcoat.2012.05.097
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发表时间：
2013-08
影响因子：
5.4
通讯作者：
Xia, Yiben
中科院分区：
文献类型：
--
作者：
Tang, Ke;Min, Jiahua;Shi, Weimin;Xia, Yiben
采用热丝化学气相沉积法生长了（110）取向金刚石薄膜。采用微波辅助氢等离子体刻蚀工艺获得氢封端金刚石薄膜。研究了氢等离子体刻蚀过程中气压和衬底温度对金刚石薄膜结构和电学性能的影响。紫外拉曼光谱显示CHXbond随着气压和基底温度的增加而增加。霍尔效应测量结果表明，CHX键密度越高，面载流子密度越高，面电阻越低，有利于高频、大功率场效应晶体管的制作。
(110)-oriented diamond films were grown by hot-filament chemical vapor deposition method. Microwave assisted hydrogen plasma etching process was used to obtain hydrogen-terminated diamond films. The influence of gas pressure and substrate temperature during hydrogen plasma etching on structural and electrical properties of diamond film was investigated. The ultra-violet Raman spectra showed CHXbond increased with the gas pressure and the substrate temperature. The Hall Effect measurement results showed that the higher CHX bond density led to a higher sheet carrier density and lower sheet resistance, which was helpful for the fabrication of high-frequency and high-power field-effect transistors.
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影响因子：
4.1
作者：
Shumin Yang;Zhoutong He;Qintao Li;De-zhang Zhu;J. Gong
通讯作者：
Shumin Yang;Zhoutong He;Qintao Li;De-zhang Zhu;J. Gong
影响因子：
4.1
作者：
D. Ballutaud;T. Kociniewski;J. Vigneron;N. Simon;H. Girard
通讯作者：
D. Ballutaud;T. Kociniewski;J. Vigneron;N. Simon;H. Girard
影响因子：
4
作者：
Jie Yang;Xia Su;Qijin Chen;Zhangda Lin
通讯作者：
Jie Yang;Xia Su;Qijin Chen;Zhangda Lin
影响因子：
3.7
作者：
J. Garrido;T. Heimbeck;M. Stutzmann
通讯作者：
J. Garrido;T. Heimbeck;M. Stutzmann
影响因子：
4
作者：
Looi, HJ;Jackman, RB;Foord, JS
通讯作者：
Foord, JS