Low-Frequency Noise in Gate Tunable Topological Insulator Nanowire Field Emission Transistor near the Dirac Point
Low-Frequency Noise in Gate Tunable Topological Insulator Nanowire Field Emission Transistor near the Dirac Point
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狄拉克点附近栅极可调拓扑绝缘体纳米线场发射晶体管中的低频噪声
DOI：
10.1088/0256-307x/33/8/087302
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发表时间：
2016-08
影响因子：
3.5
通讯作者：
Lu Li
中科院分区：
文献类型：
--
作者：
Zhang Hao;Song Zhi-Jun;Feng Jun-Ya;Ji Zhong-Qing;Lu Li
低频闪烁噪声通常与材料缺陷或制造工艺的不完善有关。到目前为止，对于拓扑绝缘体的闪烁噪声的了解非常有限，其拓扑保护的导电……（原文最后一个单词“su”似乎不完整）
Low-frequency flicker noise is usually associated with material defects or imperfection of fabrication procedure. Up to now, there is only very limited knowledge about flicker noise of the topological insulator, whose topologically protected conducting surface is theoretically immune to back scattering. To suppress the bulk conductivity we synthesize antimony doped Bi2Se3 nanowires and conduct transport measurements at cryogenic temperatures. The low-frequency current noise measurement shows that the noise amplitude at the high-drain current regime can be described by Hooge's empirical relationship, while the noise level is significantly lower than that predicted by Hooge's model near the Dirac point. Furthermore, different frequency responses of noise power spectrum density for specific drain currents at the low drain current regime indicate the complex origin of noise sources of topological insulator.
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影响因子：
4.6
作者：
Jauregui LA;Pettes MT;Rokhinson LP;Shi L;Chen YP
通讯作者：
Chen YP
超薄 Bi2Se3 薄膜中体态弱反局域化与弱局域化的交叉
影响因子：
4.6
作者：
Xue, Qi-Kun;Xue, Qi-Kun;Wang, Jian;Wang, Jian
通讯作者：
Wang, Jian
超薄 Bi2Se3 薄膜中体态弱反局域化与弱局域化的交叉
影响因子：
4.6
作者：
Wang H;Liu H;Chang CZ;Zuo H;Zhao Y;Sun Y;Xia Z;He K;Ma X;Xie XC;Xue QK;Wang J
通讯作者：
Wang J
影响因子：
4
作者：
Doyoung Jang;Jae Woo Lee;K. Tachi;L. Montès;T. Ernst;Gyu-Tae Kim;G. Ghibaudo
通讯作者：
Doyoung Jang;Jae Woo Lee;K. Tachi;L. Montès;T. Ernst;Gyu-Tae Kim;G. Ghibaudo
影响因子：
17.1
作者：
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通讯作者：
S. Bhattacharyya;Mitali Banerjee;H. Nhalil;Saurav Islam;C. Dasgupta;S. Elizabeth;A. Ghosh