The structure and optical properties of silicon nanowires prepared by inductively coupled plasma chemical vapor deposition

The structure and optical properties of silicon nanowires prepared by inductively coupled plasma chemical vapor deposition
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电感耦合等离子体化学气相沉积硅纳米线的结构和光学性能

DOI:
10.1016/j.matlet.2011.01.033
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发表时间:
2011-04
期刊:
影响因子:
3
通讯作者:
--
中科院分区:
材料科学3区
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--
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在电感耦合等离子体化学气相沉积系统中,采用气-液-固(VLS)生长机制,在380℃的生长温度下制备了硅纳米线。纳米线由晶体核心组成,周围环绕着厚厚的非晶硅外壳。随着等离子体功率的增加,在硅衬底上形成了致密的、长的、具有厚的非晶壳的纳米线,并伴随着厚厚的非催化非晶硅薄膜。与大尺寸纳米粒子相比,较小的催化剂纳米粒子更容易被等离子体激活生长出致密而细的纳米线。此外,由于高密度的细锥形硅纳米线具有很强的光捕获和减反射效应,从而实现了增强的光吸收。
Silicon nanowires were prepared by vapor–liquid–solid (VLS) mechanism at a growth temperature as low as 380°C in an inductively coupled plasma chemical vapor deposition system. The nanowires consist of crystalline core surrounded by a thick amorphous silicon shell. An increase in plasma power produces dense and long nanowires with thick amorphous shell, accompanied with a thick uncatalyzed amorphous silicon film on the silicon substrate. Small catalyst nanoparticles are easier activated by plasma to grow the dense and thin nanowires in comparison with the large-size nanoparticles. Moreover, an enhanced optical absorption is achieved due to the strong light trapping and anti-reflection effects in the thin and tapered silicon nanowires with high density.
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