Striped domains in soft magnetic FeNiN thin films
Striped domains in soft magnetic FeNiN thin films
复制标题
软磁 FeNiN 薄膜中的条纹磁畴
DOI：
10.1088/0022-3727/40/4/005
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发表时间：
2007-02
影响因子：
3.4
通讯作者：
Li, X. L.
中科院分区：
文献类型：
--
作者：
Wu, P.;Wang, X. F.;Li, Z. Q.;Bai, H. L.;Jiang, E. Y.;Li, B. L.;Zhang, B. F.;Li, X. L.
采用射频磁控溅射法在473K的Si(1 0 0)衬底上制备了具有良好软磁性能的FeN薄膜，薄膜厚度约为5 0 0 nm。系统地研究了镍离子浓度和射频功率对薄膜相结构和磁性能的影响。当镍含量从XNi=5.0%增加到XNi=65.5%时，薄膜由主要的体心立方α-(Fe，Ni)相和γ‘-相共存向体心立方的γ-(FeNi3)4N相转变。当射频功率大于160W时，沉积的样品在薄膜表面都显示出明显的可重复的条纹区，这是由于薄膜具有足够高的垂直各向异性和较小的应力所致。在P W=300W时形成了完全有序的(FeNi)N 0.0324相结构。与相应的FeN化合物相比，在不同的射频功率下制备的FeN薄膜表面光滑，软磁性能好。∼1900emu cm−3的M S，∼1Oe的H C在473K、P W=300W时获得了最佳的软磁性能。
FeNiN thin films with good soft magnetic properties were synthesized on Si (1 0 0) substrates at 473 K by RF magnetron sputtering; all the films have a thickness of around 500 nm. The dependence of phase structure and magnetic properties on nickel concentrations and RF power were systematically investigated. With increasing nickel contents from X Ni= 5.0% to X Ni= 65.5%, FeNiN thin films deposited at turn from a main bcc α-(Fe, Ni) phase coexisting with γ'-phase to fcc γ-(FeNi 3) 4 N phase. With the RF power larger than 160 W, the samples deposited at all show clear reproducible striped domains at the films' surfaces, which is explained by the high enough perpendicular anisotropy and the small stress in the film. A completely ordered structure of (FeNi) N 0.0324-phase forms at P W= 300 W. The FeNiN thin films prepared at different RF power show smooth surfaces and good soft magnetic properties compared with corresponding FeN compounds. The optimum soft magnetic properties with M S of∼ 1900 emu cm− 3, H C of∼ 1 Oe are obtained at and P W= 300 W at 473 K.
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