Twistronics in Graphene, from Transfer Assembly to Epitaxy
Twistronics in Graphene, from Transfer Assembly to Epitaxy
复制标题
石墨烯中的双电子学，从转移组装到外延
DOI：
10.3390/app10144690
复制
发表时间：
2020-07
期刊：
影响因子：
--
通讯作者：
Min Tai
中科院分区：
文献类型：
--
作者：
Wu Di;Pan Yi;Min Tai
双电子学是由二维材料如石墨烯的双分子层之间的小角度扭曲的莫尔超晶格所产生的，在二维材料和凝聚态物理领域引起了广泛的关注。这种系统中的新物理性质，如非常规超导性，来自于当扭曲达到某些魔角时出现的无色散平坦带。通过调节四重简并平坦带的填充，由于简并布洛赫电子的强关联，诱导了预期的效果。在这篇文章中，我们回顾了扭曲的双层和多层石墨烯（TBG和TMG），这是由剥离的单层石墨烯的转移组装和多层石墨烯在SiC衬底上的外延生长形成的。首先简要介绍了TBG的发展历史，然后介绍了TBG中的平带理论。本文重点介绍了这一领域的主要研究成果：（a）货车霍韦奇异性和电荷序;（B）TBG中的超导性和Mott绝缘体;（c）TBG中的输运性质。最后，展望了双电子材料的发展前景，即在SiC衬底上外延多层石墨烯。
The twistronics, which is arising from the moiré superlattice of the small angle between twisted bilayers of 2D materials like graphene, has attracted much attention in the field of 2D materials and condensed matter physics. The novel physical properties in such systems, like unconventional superconductivity, come from the dispersionless flat band that appears when the twist reaches some magic angles. By tuning the filling of the fourfold degeneracy flat bands, the desired effects are induced due to the strong correlation of the degenerated Bloch electrons. In this article, we review the twistronics in twisted bi- and multi-layer graphene (TBG and TMG), which is formed both by transfer assembly of exfoliated monolayer graphene and epitaxial growth of multilayer graphene on SiC substrates. Starting from a brief history, we then introduce the theory of flat band in TBG. In the following, we focus on the major achievements in this field: (a) van Hove singularities and charge order; (b) superconductivity and Mott insulator in TBG and (c) transport properties in TBG. In the end, we give the perspective of the rising materials system of twistronics, epitaxial multilayer graphene on the SiC.
登录
查看更多内容
影响因子：
1.9
作者：
A. V. Bommel;J. Crombeen;A. V. Tooren
通讯作者：
A. V. Bommel;J. Crombeen;A. V. Tooren
影响因子：
10.8
作者：
Shuai Wang;P. K. Ang;Ziqian Wang;A. Tang;J. Thong;K. Loh
通讯作者：
Shuai Wang;P. K. Ang;Ziqian Wang;A. Tang;J. Thong;K. Loh
影响因子：
3.7
作者：
de Laissardiere, G. Trambly;Mayou, D.;Magaud, L.
通讯作者：
Magaud, L.
影响因子：
41.2
作者：
Emtsev, Konstantin V.;Bostwick, Aaron;Seyller, Thomas
通讯作者：
Seyller, Thomas
影响因子：
3.7
作者：
Liujun Zou;Liujun Zou;H. Po;A. Vishwanath;T. Senthil
通讯作者：
Liujun Zou;Liujun Zou;H. Po;A. Vishwanath;T. Senthil