A novel low-power compact WBS human body channel receiver for wearable vital signal sensing application in wireless body-area network

A novel low-power compact WBS human body channel receiver for wearable vital signal sensing application in wireless body-area network
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一种新型低功耗紧凑型 WBS 人体通道接收器,适用于无线体域网中的可穿戴生命信号传感应用

DOI:
10.1007/s00542-016-3244-1
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发表时间:
2017-01
期刊:
Microsystem Technologies
影响因子:
--
通讯作者:
Chen Hao
Chen Hao
中科院分区:
其他
文献类型:
--
作者:
Lin Ke;Wang Bo;Zhang Xing;Wang Xinan;Ouyang Tingbin;Chen Hao

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本文提出了一种低功耗紧凑型宽带信令(WBS)人体信道(HBC)接收器的可穿戴生命传感应用在无线体域网。通过研究HBC的频域和时域特性,提出了1-100 MHz HBC信道的简单经验模型,并将其表示为带通滤波器,其输出信号为30 ns宽的微弱窄脉冲。根据对HBC的测量和建模,所提出的基于WBS的HBC接收机采用了一种具有低功耗紧凑型两级模拟前端(AFE)和全数字数据恢复电路的架构。为了进一步降低功耗和芯片面积,AFE集成了一个电容耦合前置放大器和一个完全可调的工艺,电压,温度独立的1位数字转换器的基础上施密特触发器。此外,全数字数据恢复电路采用前馈三相过采样算法,以获得约50%占空比的低抖动输出。在SMIC 130 nm CMOS工艺的实施,建议的WBS为基础的HBC接收器实现5 Mb/s的操作与功耗为0.82 mW,在1.2 V的电源电压,而占用的芯片面积为0.26 mm 2。
This paper presents a low-power compact wideband signaling (WBS) human body channel (HBC) receiver for wearable vital sensing application in wireless body-area network. By investigating the characterization of HBC in frequency-domain and time-domain, a simply empirical HBC channel model over 1–100 MHz is proposed, and represented as a bandpass filter with its output signals of weak narrow pulses in 30 ns-width. According to the measurement and modeling for HBC, the proposed WBS based HBC receiver exploits an architecture with a low-power compact two-stage analog front end (AFE) followed by an all-digital data recovery circuit. To further reduce the power consumption and chip area, the AFE incorporates a capacitor-coupling pre-amplifier and a fully adjustable process, voltage, temperature independent 1-bit digitizer based on Schmitt trigger. Furthermore, the all-digital data recovery circuit adopts the feedforward 3-phase oversampling algorithm for low-jitter output with approximate 50% duty-cycle. With implementation in SMIC 130 nm CMOS technology, the proposed WBS based HBC receiver achieves 5 Mb/s operation with the power dissipation of 0.82 mW at a 1.2 V supply voltage while occupying a chip area of 0.26 mm2.
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