1.0 V low voltage CMOS mixer based on voltage control load technique
1.0 V low voltage CMOS mixer based on voltage control load technique
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基于压控负载技术的1.0 V低压CMOS混频器
DOI：
10.1007/s11771-011-0874-4
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发表时间：
2011-10
期刊：
影响因子：
--
通讯作者：
Lu Ying-jie( 吕英杰)
中科院分区：
文献类型：
--
作者：
WEI Bao-lin(韦保林);DAI Yu-jie(戴宇杰);ZHANG Xiao-xing(张小兴);Lu Ying-jie( 吕英杰)
提出了一种工作在1.0 V电源电压下的基于压控负载技术的CMOS有源混频器，并给出了其工作原理、噪声和线性度分析。与基于射频电流换向的传统吉尔伯特型混频器相反，该混频器的负载阻抗由LO信号控制，并且每个分支只有两个堆叠晶体管，适合低压应用。该混频器采用 0.18 μm CMOS 工艺设计和制造，适用于 2.4 GHz ISM 频段应用。输入2.44 GHz RF信号和2.442 GHz LO信号时，所提出的混频器的测量规格为：变频增益（GC）为5.3 dB，输入参考三阶交调点（PIIP3）为4.6 dBm，输入参考1 dB压缩点（P1dB）为-7.4 dBm，单边带噪声系数（NFSSB）为21.7 dB。
CMOS active mixer based on voltage control load technique which can operate at 1.0 V supply voltage was proposed, and its operation principle, noise and linearity analysis were also presented. Contrary to the conventional Gilbert-type mixer which is based on RF current-commutating, the load impedance in this proposed mixer is controlled by the LO signal, and it has only two stacked transistors at each branch which is suitable for low voltage applications. The mixer was designed and fabricated in 0.18 μm CMOS process for 2.4 GHz ISM band applications. With an input of 2.44 GHz RF signal and 2.442 GHz LO signal, the measurement specifications of the proposed mixer are: the conversion gain (GC) is 5.3 dB, the input-referred third-order intercept point (PIIP3) is 4.6 dBm, the input-referred 1 dB compression point (P1dB) is −7.4 dBm, and the single-sideband noise figure (NFSSB) is 21.7 dB.
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影响因子：
5.4
作者：
H. Darabi;Janice Chiu
通讯作者：
H. Darabi;Janice Chiu
影响因子：
5.4
作者：
V. Vidojkovic;van der Jd Johan Tang;A. Leeuwenburgh;Van Roermund
通讯作者：
V. Vidojkovic;van der Jd Johan Tang;A. Leeuwenburgh;Van Roermund
DOI：
10.1109/tmtt.2005.862665
发表时间：
2006-02
影响因子：
4.3
作者：
Ming-Feng Huang;C. Kuo;Shuenn-Yuh Lee
通讯作者：
Ming-Feng Huang;C. Kuo;Shuenn-Yuh Lee
影响因子：
5.4
作者：
V. Vidojkovic;J. D. V. Tang;A. Leeuwenburgh;A. Roermund
通讯作者：
V. Vidojkovic;J. D. V. Tang;A. Leeuwenburgh;A. Roermund
影响因子：
4.3
作者：
Student Member Ieee Trung-Kien Nguyen;V. Krizhanovskii;Jeong-Seon Lee;Seok-Kyun Han;Member Ieee Sang-Gug Lee
通讯作者：
Student Member Ieee Trung-Kien Nguyen;V. Krizhanovskii;Jeong-Seon Lee;Seok-Kyun Han;Member Ieee Sang-Gug Lee