Structure-resistive property relationships in thin ferroelectric BaTiO[Formula: see text] films.
Structure-resistive property relationships in thin ferroelectric BaTiO[Formula: see text] films.
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DOI：
10.1038/s41598-020-72738-5
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发表时间：
2020-09-28
影响因子：
4.6
通讯作者：
Petukhov AE
中科院分区：
文献类型：
--
作者：
Andreeva NV;Petraru A;Vilkov OY;Petukhov AE
在30-295 K温度范围内，用压电响应力显微镜、隧道原子力显微镜和扫描隧道显微镜对SrTiO/LaSrMnO/BaTiO异质结构的局域结构、电学和铁电性质进行了综合研究。薄膜结构（外延，纳米晶或多晶）与局部电和铁电性能的直接相关性进行了观察。对于多晶铁电薄膜，主要的极化状态是由带正电的点缺陷屏蔽内建场的特性所定义的。基于扫描隧道能谱的结果，人们发现，一个高电压的应用挑起的修改有关的点缺陷在薄铁电薄膜的重新分布的局部电阻特性。获得的压电响应力显微镜，隧穿原子力显微镜和扫描隧道显微镜的图像与扫描隧道光谱测量的定性分析，使我们能够得出结论，在存在的结构缺陷的竞争过程中的电子注入，陷阱填充和漂移的带正电的点缺陷驱动下施加电场的薄膜的电阻特性的变化。在本文中，我们提出了一种新的方法的基础上，扫描隧道显微镜/光谱在微真空条件下澄清点缺陷的影响，局部电阻特性的纳米厚的铁电薄膜。
A combined study of local structural, electric and ferroelectric properties of SrTiO/LaSrMnO/BaTiO heterostructures was performed by Piezoresponse Force Microscopy, tunneling Atomic Force Microscopy and Scanning Tunneling Microscopy in the temperature range 30–295 K. The direct correlation of film structure (epitaxial, nanocrystalline or polycrystalline) with local electric and ferroelectric properties was observed. For polycrystalline ferroelectric films the predominant polarization state is defined by the peculiarity of screening the built-in field by positively charged point defects. Based on Scanning Tunneling Spectroscopy results, it was found that a sequent voltage application provokes the modification of local resistive properties related to the redistribution of point defects in thin ferroelectric films. A qualitative analysis of acquired Piezoresponse Force Microscopy, tunneling Atomic Force Microscopy and Scanning Tunneling Microscopy images together with Scanning Tunneling Spectroscopy measurements enabled us to conclude that in the presence of structural defects the competing processes of electron injection, trap filling and the drift of positively charged point defects drives the change of resistive properties of thin films under applied electric field. In this paper, we propose a new approach based on Scanning Tunneling Microscopy/Spectroscopy under ultrahigh vacuum conditions to clarify the influence of point defects on local resistive properties of nanometer-thick ferroelectric films.
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影响因子：
--
作者：
Jia C;Li J;Yang G;Chen Y;Zhang W
通讯作者：
Zhang W
影响因子：
16.6
作者：
Boyn S;Grollier J;Lecerf G;Xu B;Locatelli N;Fusil S;Girod S;Carrétéro C;Garcia K;Xavier S;Tomas J;Bellaiche L;Bibes M;Barthélémy A;Saïghi S;Garcia V
通讯作者：
Garcia V
影响因子：
2.3
作者：
Andreeva, N., V;Petrov, A. A.;Rybkin, A. G.
通讯作者：
Rybkin, A. G.
影响因子：
4
作者：
Choi, J;Eom, CB;Blank, DHA
通讯作者：
Blank, DHA
影响因子：
4
作者：
KROGER, FA;VINK, HJ
通讯作者：
VINK, HJ