Hybrid oxide brain-inspired neuromorphic devices for hardware implementation of artificial intelligence.
Hybrid oxide brain-inspired neuromorphic devices for hardware implementation of artificial intelligence.
复制标题
用于人工智能硬件实施的杂化氧化物脑启发的神经形态设备。
DOI：
10.1080/14686996.2021.1911277
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发表时间：
2021-05-14
影响因子：
5.5
通讯作者：
Zhuge F
中科院分区：
文献类型：
--
作者：
Wang J;Zhuge X;Zhuge F
ABSTRACT The state-of-the-art artificial intelligence technologies mainly rely on deep learning algorithms based on conventional computers with classical von Neumann computing architectures, where the memory and processing units are separated resulting in an enormous amount of energy and time consumed in the data transfer process. Inspired by the human brain acting like an ultra-highly efficient biological computer, neuromorphic computing is proposed as a technology for hardware implementation of artificial intelligence. Artificial synapses are the main component of a neuromorphic computing architecture. Memristors are considered to be a relatively ideal candidate for artificial synapse applications due to their high scalability and low power consumption. Oxides are most widely used in memristors due to the ease of fabrication and high compatibility with complementary metal-oxide-semiconductor processes. However, oxide memristors suffer from unsatisfactory stability and reliability. Oxide-based hybrid structures can effectively improve the device stability and reliability, therefore providing a promising prospect for the application of oxide memristors to neuromorphic computing. This work reviews the recent advances in the development of hybrid oxide memristive synapses. The discussion is organized according to the blending schemes as well as the working mechanisms of hybrid oxide memristors. Graphical abstract
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影响因子：
2.3
作者：
Covi, E.;Brivio, S.;Spiga, S.
通讯作者：
Spiga, S.
影响因子：
3.1
作者：
Bousoulas, Panagiotis;Michelakaki, Irini;Tsoukalas, Dimitris
通讯作者：
Tsoukalas, Dimitris
DOI：
10.1007/s00339-011-6264-9
发表时间：
2011-03-01
影响因子：
2.7
作者：
Chua, Leon
通讯作者：
Chua, Leon
影响因子：
56.9
作者：
Fuller, Elliot J.;Keene, Scott T.;Talin, A. Alec
通讯作者：
Talin, A. Alec
影响因子：
16.6
作者：
Boybat I;Le Gallo M;Nandakumar SR;Moraitis T;Parnell T;Tuma T;Rajendran B;Leblebici Y;Sebastian A;Eleftheriou E
通讯作者：
Eleftheriou E