Emerging materials and design principles for wurtzite-type ferroelectrics

Emerging materials and design principles for wurtzite-type ferroelectrics
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纤锌矿型铁电体的新兴材料和设计原理

DOI:
10.1016/j.matt.2024.02.001
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发表时间:
2024
期刊:
影响因子:
18.9
通讯作者:
Gorai, Prashun
Gorai, Prashun
中科院分区:
材料科学1区
文献类型:
--
作者:
Lee, Cheng-Wei;Din, Naseem Ud;Yazawa, Keisuke;Brennecka, Geoff L.;Zakutayev, Andriy;Gorai, Prashun

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低能耗内存计算架构有望减少计算和数据存储的能源需求。纤锌矿型铁电体在性能和与现有半导体工艺的集成方面都是很有前途的选择。Al1-xScxN合金是少数表现出极化开关的四面体材料之一,但开关极化所需的电场太高(几MV/cm)。超越二元化合物,我们探索了多元纤锌矿型化合物的搜索空间。通过这次大规模的搜索,我们确定了四种有前途的三元氮化物和氧化物,包括Mg2PN3, MgSiN2, Li2SiO3和Li2GeO3,用于未来的实验实现和工程。在90%的考虑的多元材料中,我们发现了独特的开关路径和非极性结构,与通常假设的铝基材料的开关机制不同。我们的研究结果在比较不同的化学物质时反驳了现有的基于降低纤晶/晶格参数比的设计原则,同时支持了两个新兴的设计原则-离子性和键强度。
Low-energy compute-in-memory architectures promise to reduce the energy demand for computation and data storage. Wurtzite-type ferroelectrics are promising options for both performance and integration with existing semiconductor processes. The Al1-xScxN alloy is among the few tetrahedral materials that exhibit polarization switching, but the electric field required to switch the polarization is too high (few MV/cm). Going beyond binary compounds, we explore the search space of multinary wurtzite-type compounds. Through this large-scale search, we identify four promising ternary nitrides and oxides, including Mg2PN3, MgSiN2, Li2SiO3, and Li2GeO3, for future experimental realization and engineering. In90% of the considered multinary materials, we identify unique switching pathways and non-polar structures that are distinct from the commonly assumed switching mechanism in AlN-based materials. Our results disprove the existing design principle based on the reduction of the wurtzitec/alattice parameter ratio when comparing different chemistries while supporting two emerging design principles—ionicity and bond strength.
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