Emerging materials and design principles for wurtzite-type ferroelectrics
Emerging materials and design principles for wurtzite-type ferroelectrics
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纤锌矿型铁电体的新兴材料和设计原理
DOI:
10.1016/j.matt.2024.02.001
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发表时间:
2024
期刊:
影响因子:
18.9
通讯作者:
Gorai, Prashun
中科院分区:
文献类型:
--
作者:
Lee, Cheng-Wei;Din, Naseem Ud;Yazawa, Keisuke;Brennecka, Geoff L.;Zakutayev, Andriy;Gorai, Prashun
Low-energy compute-in-memory architectures promise to reduce the energy demand for computation and data storage. Wurtzite-type ferroelectrics are promising options for both performance and integration with existing semiconductor processes. The Al1-xScxN alloy is among the few tetrahedral materials that exhibit polarization switching, but the electric field required to switch the polarization is too high (few MV/cm). Going beyond binary compounds, we explore the search space of multinary wurtzite-type compounds. Through this large-scale search, we identify four promising ternary nitrides and oxides, including Mg2PN3, MgSiN2, Li2SiO3, and Li2GeO3, for future experimental realization and engineering. In90% of the considered multinary materials, we identify unique switching pathways and non-polar structures that are distinct from the commonly assumed switching mechanism in AlN-based materials. Our results disprove the existing design principle based on the reduction of the wurtzitec/alattice parameter ratio when comparing different chemistries while supporting two emerging design principles—ionicity and bond strength.
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影响因子:
4
作者:
Zhijie Liu;Xinyu Wang;Xin;Yurong Yang;Di Wu
通讯作者:
Di Wu
影响因子:
4
作者:
Yazawa, Keisuke;Drury, Daniel;Brennecka, Geoff L.
通讯作者:
Brennecka, Geoff L.
DOI:
--
发表时间:
2013
期刊:
影响因子:
--
作者:
E. Masanet;Arman Shehabi;J. Koomey
通讯作者:
J. Koomey
影响因子:
56.9
作者:
S. Calderon;J. Hayden;Steven M. Baksa;William Tzou;S. Trolier;I. Dabo;J. Maria;E. Dickey
通讯作者:
E. Dickey
影响因子:
6.1
作者:
Moriwake, Hiroki;Yokoi, Rie;Itoh, Mitsuru
通讯作者:
Itoh, Mitsuru