Protrusion of Through-Silicon-Via (TSV) Copper with Double Annealing Processes
Protrusion of Through-Silicon-Via (TSV) Copper with Double Annealing Processes
复制标题
采用双重退火工艺突出硅通孔 (TSV) 铜
DOI：
10.1007/s11664-022-09503-z
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发表时间：
2022-03
影响因子：
4.5
通讯作者：
Tong An
中科院分区：
文献类型：
--
作者：
Min Zhang;Fei Qin;Si Chen;Yanwei Dai;Pei Chen;Tong An
铜填充硅通孔 (TSV-Cu) 是芯片堆叠和三维 (3D) 垂直封装的关键技术。退火工艺和互连介电层沉积引起的多重热负荷会导致连续的 TSV-Cu 突出，这会严重影响其可靠性。本文定量研究了 TSV-Cu 二次退火过程中第二突起高度与其显微组织特征之间的关系。结果发现，一次退火后的TSV-Cu晶粒尺寸较大，追加退火时的二次凸出值可大大降低。第二突起的减少现象与<111>织构、Σ3晶界类型等显微组织特征有关。此外，通过有限元分析（FEA）分析应力和应变，揭示双退火过程中TSV-Cu第二突起高度的降低机制。将所制造的 TSV-Cu 的初始残余应力及其通过纳米压痕测试测量的机械性能参数纳入有限元分析中。主要结果表明，如果首先在 400°C 高温下对 TSV-Cu 进行退火，额外的热载荷会导致等效塑性应变 (PEEQ) 和 von Mises 应力的增加较小。这验证了TSV-Cu的第二突起趋势，并解释了TSV-Cu的第二突起高度的降低机制。图解摘要
Copper filled through silicon via (TSV-Cu) is a crucial technology for chip stacking and three-dimensional (3D) vertical packaging. The multiple thermal loadings caused by the annealing process and deposition of interconnected dielectric layers lead to continuous TSV-Cu protrusions, which can affect its reliability severely. In this paper, the relationship between second protrusion height of TSV-Cu and its microstructur characteristics during double annealing is quantitatively investigated. It is found that grain size of TSV-Cu after annealing once is larger, and the second protrusion value under additional annealing can be greatly reduced. The reduction phenomenon of second protrusion is relative to the microstructure characteristics such as <111> texture andΣ3 grain boundary type. In addition, stress and strain are analyzed by finite element analysis (FEA) to reveal the reduction mechanisms of the second protrusion height of TSV-Cu during double annealing. The initial residual stress of fabricated TSV-Cu and its mechanical property parameters measured by nanoindentation test are incorporated in FEA. The main results show that additional thermal loading leads to a smaller increase of equivalent plastic strain (PEEQ) and von Mises stress if the TSV-Cu is annealed firstly at a high temperature of 400°C. This verifies the second protrusion tendency of TSV-Cu, and explains the reduction mechanisms of the second protrusion height of TSV-Cu.Graphical Abstract
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DOI：
10.1016/j.proeng.2015.09.242
发表时间：
2016
期刊：
Procedia Engineering
影响因子：
--
作者：
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影响因子：
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影响因子：
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DOI：
10.1109/tcpmt.2018.2810321
发表时间：
2018-04
期刊：
IEEE Transactions on Components, Packaging and Manufacturing Technology
影响因子：
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通讯作者：
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