Discrete Relaxation Method for Triple Patterning Lithography Layout Decomposition
Discrete Relaxation Method for Triple Patterning Lithography Layout Decomposition
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三重图案光刻布局分解的离散松弛方法
DOI：
10.1109/tc.2016.2582154
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发表时间：
2017-02
影响因子：
3.7
通讯作者：
Zhu Wenxing
中科院分区：
文献类型：
--
作者：
Li Xingquan;Zhu Ziran;Zhu Wenxing
In this paper, we consider the triple patterning lithography layout decomposition problem. To address the problem, a discrete relaxation theory is built. For designing a discrete relaxation based decomposition framework, we propose a surface projection method for identifying native conflicts in a layout, and then constructing the conflict graph. Guided by the theory, the conflict graph is reduced to small size subgraphs by vertex removals, which is a discrete relaxation. Furthermore, by ignoring stitch insertions and assigning weights to features, the layout decomposition problem on the small subgraphs is further relaxed to a 0-1 program, which is solved by the Branch-and-Bound method. To obtain a feasible solution of the original problem, legalization methods are introduced to legalize a relaxation solution. At the legalization stage, we prior utilize one-stitch insertion to eliminate conflicts, and use a backtrack coloring algorithm to obtain a better solution. We test our decomposition approach on the ISCAS-85 & 89 benchmarks. Comparisons of experimental results show that our approach finds solutions of some benchmarks better than those by the state-of-the-art decomposers. Especially, according to our discrete relaxation theory, some optimal decompositions are obtained.
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DOI：
10.1109/iccad.2008.4681616
发表时间：
2008
期刊：
2008 IEEE/ACM International Conference on Computer-Aided Design
影响因子：
--
作者：
A. Kahng;Chul-Hong Park;Xu Xu-Xu;Hailong Yao
通讯作者：
A. Kahng;Chul-Hong Park;Xu Xu-Xu;Hailong Yao
DOI：
10.1007/978-3-540-24838-5_24
发表时间：
2004-05
期刊：
--
影响因子：
--
作者：
C. Lucet;F. Mendes;A. Moukrim
通讯作者：
C. Lucet;F. Mendes;A. Moukrim
DOI：
10.1109/iccad.2013.6691115
发表时间：
2013-11
期刊：
2013 IEEE/ACM International Conference on Computer-Aided Design (ICCAD)
影响因子：
--
作者：
Ye Zhang;W. Luk;H. Zhou;Changhao Yan;Xuan Zeng
通讯作者：
Ye Zhang;W. Luk;H. Zhou;Changhao Yan;Xuan Zeng
DOI：
10.1145/2717764.2717768
发表时间：
2015-03
期刊：
Proceedings of the 2015 Symposium on International Symposium on Physical Design
影响因子：
--
作者：
Hsi-An Chien;Szu-Yuan Han;Ye-Hong Chen;Ting-Chi Wang
通讯作者：
Hsi-An Chien;Szu-Yuan Han;Ye-Hong Chen;Ting-Chi Wang
DOI：
10.1109/iccad.2011.6105297
发表时间：
2008-11
期刊：
2011 IEEE/ACM International Conference on Computer-Aided Design (ICCAD)
影响因子：
--
作者：
Bei Yu;Kun Yuan;Boyang Zhang;Duo Ding;D. Pan
通讯作者：
Bei Yu;Kun Yuan;Boyang Zhang;Duo Ding;D. Pan