Reduction of the forming voltage through tailored oxygen non-stoichiometry in tantalum oxide ReRAM devices.
Reduction of the forming voltage through tailored oxygen non-stoichiometry in tantalum oxide ReRAM devices.
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DOI：
10.1038/s41598-018-28992-9
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发表时间：
2018-07-18
影响因子：
4.6
通讯作者：
Baeumer C
中科院分区：
文献类型：
--
作者：
Skaja K;Andrä M;Rana V;Waser R;Dittmann R;Baeumer C
在这项研究中，我们研究了氧的非化学计量对钽氧化物基忆阻器件的阻变性能的影响。用不同的溅射功率和氧分压沉积氧化钽薄膜。电铸电压随功率密度的增加或氧分压的降低而降低，而耐久性保持稳定，电阻窗口罗夫/罗恩增大。深入的XPS分析将这些观察结果与沉积膜中的可控氧亚化学计量相联系。我们的分析表明，形成电压的降低是由于所制备的薄膜中载流子密度的增加，这是由氧空位的存在引起的。
In this study, we investigated the influence of oxygen non-stoichiometry on the resistive switching performance of tantalum oxide based memristive devices. Thin-films of tantalum oxide were deposited with varying sputter power and oxygen partial pressure. The electroforming voltage was found to decrease with increasing power density or decreased oxygen partial pressure, while the endurance remained stable and the resistance window ROFF/RON was found to increase. In-depth XPS analysis connects these observations to a controllable oxygen sub-stoichiometry in the sputter-deposited films. Our analysis shows that the decrease of the forming voltage results from an increase in carrier density in the as-prepared thin-films, which is induced by the presence of oxygen vacancies.
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影响因子：
29.4
作者：
Cooper, David;Baeumer, Christoph;Dittmann, Regina
通讯作者：
Dittmann, Regina
影响因子：
3.1
作者：
Chen, An
通讯作者：
Chen, An
影响因子：
6.1
作者：
Andrae, Michael;Dvorak, Filip;Waser, Rainer
通讯作者：
Waser, Rainer
影响因子：
5.4
作者：
Cormier, P. -A.;Balhamri, A.;Konstantinidis, S.
通讯作者：
Konstantinidis, S.
影响因子：
3.7
作者：
Rico, Victor;Borras, Ana;Gonzalez-Elipe, Agustin R.
通讯作者：
Gonzalez-Elipe, Agustin R.