Tunable digital-to-analog switching in Nb2O5-based resistance switching devices by oxygen vacancy engineering
Tunable digital-to-analog switching in Nb2O5-based resistance switching devices by oxygen vacancy engineering
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通过氧空位工程实现 Nb2O5 基电阻开关器件中的可调谐数模开关
DOI：
10.1016/j.apsusc.2021.152114
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发表时间：
2021-12
影响因子：
6.7
通讯作者：
Rui Xiong
中科院分区：
文献类型：
--
作者：
Jing Xu;Hongjun Wang;Yuanyuan Zhu;Yong Liu;Zhaorui Zou;Guoqiang Li;Rui Xiong
忆阻器由于其小型化的潜力，最近在神经形态计算和高密度数据存储方面受到了极大的关注;然而，设备小型化所需的微制造技术的发展和成本在很大程度上限制了其神经形态计算应用。在这里，我们研究的过渡，从突变/数字到渐进/模拟电阻开关（RS）的行为在Cu/Nb 2 O 5/Pt存储器件。通过在Pt（150 nm）/Ti/SiO2/Si衬底上脉冲激光沉积制备Nb 2 O 5开关层，并将沉积温度从250 °C调节到400 °C，该转变由Nb 2 O 5开关层中的氧空位数决定。XPS结果表明，随着沉积温度的升高，Nb 2 O 5开关层中的氧空位浓度逐渐增加。通过增加开关层中的氧空位浓度，Cu/Nb 2 O 5/Pt存储器件的复位过程由突变转变为渐变开关，置位过程由突变转变为阶梯开关。此外，与氧空位导电丝的形成/断裂相关的动态可控氧空位浓度被认为是Cu/Nb 2 O 5/Pt存储器件中RS行为的原因。这项工作提供了一个新的机会，定制的RS行为在存储设备中的氧工程和铺平了道路，模拟人工突触的研究。
Memristors have received tremendous attention recently for neuromorphic computing and high-density data storage due to their potential for miniaturization; however, the development and cost of microfabrication technologies required for device miniaturization have largely limited their neuromorphic computing applications. Herein, we investigate the transition from abrupt/digital to gradual/analog resistive switching (RS) behavior in Cu/Nb2O5/Pt memory devices. This transition is determined by the number of oxygen vacancies in the Nb2O5switching layer by regulating the deposition temperature from 250 °C to 400 °C, which was prepared by pulsed laser deposition on a Pt (150 nm)/Ti/SiO2/Si substrate. The XPS results revealed that the oxygen vacancy concentration in the Nb2O5switching layer increased gradually upon increasing the deposition temperature. By increasing the oxygen vacancy concentration in the switching layer, the reset process changed from abrupt to gradual switching, and the set process changed from abrupt to stepwise switching for the Cu/Nb2O5/Pt memory devices. In addition, the dynamically controllable oxygen vacancy concentration related to the formation/rupture of oxygen vacancy conducting filaments is suggested to be responsible for the RS behavior in Cu/Nb2O5/Pt memory devices. This work provides a new opportunity to tailor the RS behavior in memory devices by oxygen engineering and paves the way for research into analog artificial synapses.
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用于神经形态计算的模拟型电阻开关器件
DOI：
10.1002/pssr.201900204
发表时间：
2019-07
期刊：
physica status solidi (RRL) – Rapid Research Letters
影响因子：
--
作者：
Wenbin Zhang;Bin Gao;Jianshi Tang;Xinyi Li;Wei Wu;He Qian;Huaqiang Wu
通讯作者：
Huaqiang Wu
影响因子：
3.1
作者：
Bousoulas, Panagiotis;Michelakaki, Irini;Tsoukalas, Dimitris
通讯作者：
Tsoukalas, Dimitris
影响因子：
6.2
作者：
Ma, Yuanzhi;Goodwill, Jonathan M.;Skowronski, Marek
通讯作者：
Skowronski, Marek
影响因子：
10.8
作者：
Jo, Sung Hyun;Chang, Ting;Lu, Wei
通讯作者：
Lu, Wei
影响因子：
5.4
作者：
A. M. Rana;M. Ismail;Tahira Akber;M. Nadeem;Sungjun Kim
通讯作者：
A. M. Rana;M. Ismail;Tahira Akber;M. Nadeem;Sungjun Kim