Graphene Oxide Addition With Low Fraction Improving Surface Charge Inhibition Performance of Epoxy/SiC Coating Under DC Stress
Graphene Oxide Addition With Low Fraction Improving Surface Charge Inhibition Performance of Epoxy/SiC Coating Under DC Stress
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低比例氧化石墨烯的添加提高了环氧/碳化硅涂层在直流应力下的表面电荷抑制性能
DOI：
10.1109/access.2019.2960469
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发表时间：
2020
期刊：
影响因子：
3.9
通讯作者：
Z.Y. Li
中科院分区：
文献类型：
--
作者：
Y. Gao;X.C. Yuan;H. Wang;M.H. Wang;Z.Y. Li
直流应力下的表面电荷积累是降低环氧基纳米复合材料绝缘性能的关键因素。表面涂层已被用来抑制电荷积累，但涂层材料的抑制机制仍不清楚。本文选择氧化石墨烯（GO）和碳化硅（SiC）作为填料，制备了以环氧树脂为基料的涂层材料。 GO 对环氧/SiC 涂层表面电荷抑制性能的作用已被估计。测试结果表明，随着环氧/SiC涂层中纳米SiC含量从1 wt%增加到5 wt%，电荷抑制性能和闪络电压逐渐提高。对于环氧树脂/(SiC+GO)涂层，电荷抑制性能和闪络电压随着SiC含量的增加而降低。研究表明，低含量GO的添加可以提高环氧树脂/SiC涂层的电荷抑制性能。 GO 引起的涂层材料中陷阱分布的变化应该是电荷抑制行为增强的原因。
Surface charge accumulation under DC stress is a critical factor in reducing the insulation performance of epoxy-based nanocomposite. Surface coating has been used to inhibit the charge accumulation, but the inhibition mechanism of the coating material is still unclear. In this paper, graphene oxide (GO) and silicon carbide (SiC) have been selected as fillers to prepare the coating material with epoxy as the base material. The role of GO on surface charge inhibition performance of epoxy/SiC coating has been estimated. The test results showed that the charge inhibition performance and the flashover voltage increase with the growth of nano-SiC content from 1 wt% to 5 wt% in the epoxy/SiC coating. As regards the epoxy/(SiC+GO) coating, the charge inhibition performance and flashover voltage reduce as the SiC content increases. It is suggested that the charge inhibition performance of epoxy/SiC coating can be improved with a low content addition of GO. The variation of trap distribution in the coating material caused by the GO should be responsible for the enhanced charge inhibition behavior.
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