Raman evidence for pressure-induced formation of diamondene.
Raman evidence for pressure-induced formation of diamondene.
复制标题
压力诱导形成金刚石烯的拉曼证据。
DOI:
10.1038/s41467-017-00149-8
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发表时间:
2017-07-21
影响因子:
16.6
通讯作者:
Cançado LG
中科院分区:
文献类型:
--
作者:
Martins LGP;Matos MJS;Paschoal AR;Freire PTC;Andrade NF;Aguiar AL;Kong J;Neves BRA;de Oliveira AB;Mazzoni MSC;Filho AGS;Cançado LG
Despite the advanced stage of diamond thin-film technology, with applications ranging from superconductivity to biosensing, the realization of a stable and atomically thick two-dimensional diamond material, named here as diamondene, is still forthcoming. Adding to the outstanding properties of its bulk and thin-film counterparts, diamondene is predicted to be a ferromagnetic semiconductor with spin polarized bands. Here, we provide spectroscopic evidence for the formation of diamondene by performing Raman spectroscopy of double-layer graphene under high pressure. The results are explained in terms of a breakdown in the Kohn anomaly associated with the finite size of the remaining graphene sites surrounded by the diamondene matrix. Ab initio calculations and molecular dynamics simulations are employed to clarify the mechanism of diamondene formation, which requires two or more layers of graphene subjected to high pressures in the presence of specific chemical groups such as hydroxyl groups or hydrogens. The synthesis of two-dimensional diamond is the ultimate goal of diamond thin-film technology. Here, the authors perform Raman spectroscopy of bilayer graphene under pressure, and obtain spectroscopic evidence of formation of diamondene, an atomically thin form of diamond.
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影响因子:
4.1
作者:
Krauss, AR;Auciello, O;Ding, MQ
通讯作者:
Ding, MQ
影响因子:
10.8
作者:
Kvashnin, Alexander G.;Chernozatonskii, Leonid A.;Sorokin, Pavel B.
通讯作者:
Sorokin, Pavel B.
影响因子:
2.1
作者:
Clark, S. M.;Jeon, Ki-Joon;Yoo, Choong-Shik
通讯作者:
Yoo, Choong-Shik
DOI:
10.1073/pnas.0811754106
发表时间:
2009-05-05
影响因子:
11.1
作者:
Huang, Mingyuan;Yan, Hugen;Hone, James
通讯作者:
Hone, James
影响因子:
2.9
作者:
HOOVER, WG
通讯作者:
HOOVER, WG