Magnetic memory driven by topological insulators.
Magnetic memory driven by topological insulators.
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DOI：
10.1038/s41467-021-26478-3
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发表时间：
2021-10-29
影响因子：
16.6
通讯作者：
Wang KL
中科院分区：
文献类型：
--
作者：
Wu H;Chen A;Zhang P;He H;Nance J;Guo C;Sasaki J;Shirokura T;Hai PN;Fang B;Razavi SA;Wong K;Wen Y;Ma Y;Yu G;Carman GP;Han X;Zhang X;Wang KL
由拓扑绝缘体(TIS)产生的巨大自旋轨道力矩(SOT)为磁存储提供了一种能量高效的写入方法，但由于与磁隧道结(MTJ)集成的挑战，这种写入方法在实际应用中还为时过早。在这里，我们展示了一种功能齐全的TI-MTJ器件，它可能成为未来高能效自旋电子器件的核心元件，例如基于SOT的磁随机存取存储器(SOT-MRAM)。该器件在室温下同时获得了最高的隧道磁阻比102%和1.2x105 A cm−2的超低开关电流密度，为实现TI驱动的SOT-MRAM奠定了基础。TIS中的电荷-自旋转换效率θSH是通过SOT引起的磁开关场移动(θSH = 1.59)和SOT诱导的铁磁共振(θSH = 1.02)来量化的，它比传统重金属的电荷-自旋转换效率大一个数量级。这些结果激发了SOT-MRAM从经典材料到量子材料的革命，具有进一步降低能耗的巨大潜力。将拓扑绝缘体(TI)与磁性隧道结(MTJ)集成在自旋电子学应用中仍然具有挑战性。在这里，作者在室温下在TI-MTJ器件中实现了大的隧道磁阻比和低的开关电流密度，非常有希望用于TI驱动的磁存储。
Giant spin-orbit torque (SOT) from topological insulators (TIs) provides an energy efficient writing method for magnetic memory, which, however, is still premature for practical applications due to the challenge of the integration with magnetic tunnel junctions (MTJs). Here, we demonstrate a functional TI-MTJ device that could become the core element of the future energy-efficient spintronic devices, such as SOT-based magnetic random-access memory (SOT-MRAM). The state-of-the-art tunneling magnetoresistance (TMR) ratio of 102% and the ultralow switching current density of 1.2 × 105 A cm−2 have been simultaneously achieved in the TI-MTJ device at room temperature, laying down the foundation for TI-driven SOT-MRAM. The charge-spin conversion efficiency θSH in TIs is quantified by both the SOT-induced shift of the magnetic switching field (θSH = 1.59) and the SOT-induced ferromagnetic resonance (ST-FMR) (θSH = 1.02), which is one order of magnitude larger than that in conventional heavy metals. These results inspire a revolution of SOT-MRAM from classical to quantum materials, with great potential to further reduce the energy consumption. It remains challenging to integrate topological insulators (TI) with magnetic tunnel junctions (MTJ) for spintronics applications. Here, the authors achieve a large tunneling magnetoresistance ratio and a low switching current density in a TI-MTJ device at room temperature, very promising for TI-driven magnetic memory.
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