Nitrogen pair-induced temperature insensitivity of the band gap of GaNSb alloys
Nitrogen pair-induced temperature insensitivity of the band gap of GaNSb alloys
复制标题
氮对引起的 GaNSb 合金带隙的温度不敏感性
DOI：
10.1088/1361-6463/aaeec9
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发表时间：
2019
期刊：
影响因子：
--
通讯作者：
Linhart W
中科院分区：
文献类型：
--
作者：
Linhart W
在4.2 - 300 K之间使用红外吸收光谱研究了GaN x Sb 1− x薄膜的带隙在1.1-3.3 m（0.35-1.1 eV）范围内的温度依赖性。与其他稀氮化物半导体一样，与主体二元化合物相比，通过与氮合金化降低了带隙的温度依赖性。然而，对于GaNSb，对于具有最低N含量的样品，观察到带隙随温度的最小变化，其中带隙几乎完全对温度变化不敏感。这与更广泛研究的GaN x As 1− x合金形成对比，其中带隙随温度的变化随着N含量的增加而减小。的温度依赖性的吸收光谱内的GaSb的扩展导带态和与N原子相关的本地化状态之间的相互作用的所谓的带反交叉模型进行了模拟。的N次近邻对状态被发现负责的GaNSb合金的带隙的温度不敏感性，作为其接近的导带边缘的结果，给他们一个更显着的作用比在GaNAs合金。
The temperature dependence of the band gap of GaN x Sb 1− x films with has been studied in the 1.1–3.3 m (0.35–1.1 eV) range using infrared absorption spectroscopy between 4.2 and 300 K. As with other dilute nitride semiconductors, the temperature dependence of the band gap is reduced by alloying with nitrogen when compared to the host binary compound. However, for GaNSb, the smallest variation of the band gap with temperature is observed for samples with the lowest N content for which the band gap is almost totally insensitive to temperature changes. This contrasts with the more widely studied GaN x As 1− x alloys in which the band gap variation with temperature decreases with increasing N content. The temperature-dependent absorption spectra are simulated within the so-called band anticrossing model of the interaction between the extended conduction band states of the GaSb and the localized states associated with the N atoms. The N next-nearest neighbor pair states are found to be responsible for the temperature insensitivity of the band gap of the GaNSb alloys as a result of their proximity to the conduction band edge giving them a more pronounced role than in GaNAs alloys.
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DOI：
10.1088/0953-8984/21/25/255801
发表时间：
2009
期刊：
Journal of Physics: Condensed Matter
影响因子：
--
作者：
N. Vogiatzis;J. Rorison
通讯作者：
J. Rorison
DOI：
10.1143/jjap.35.1273
发表时间：
1996-02-01
期刊：
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS
影响因子：
--
作者：
Kondow, M;Uomi, K;Yazawa, Y
通讯作者：
Yazawa, Y
GaInNSb 合金中的 N 掺入以及与 GaSb 的晶格匹配
影响因子：
3.2
作者：
Ashwin M
通讯作者：
Ashwin M
影响因子：
1.8
作者：
L. Buckle;B. R. Bennett;Stuart Jollands;T. Veal;N. Wilson;B. Murdin;C. McConville;T. Ashley
通讯作者：
L. Buckle;B. R. Bennett;Stuart Jollands;T. Veal;N. Wilson;B. Murdin;C. McConville;T. Ashley
影响因子：
--
作者：
PIDGEON, CR;BROWN, RN
通讯作者：
BROWN, RN