In situ synchrotron X-ray diffraction study on epitaxial-growth dynamics of III–V semiconductors
In situ synchrotron X-ray diffraction study on epitaxial-growth dynamics of III–V semiconductors
复制标题
III-V族半导体外延生长动力学的原位同步加速器X射线衍射研究
DOI：
10.7567/jjap.57.050101
复制
发表时间：
2018
影响因子：
1.5
通讯作者：
M. Takahasi
中科院分区：
文献类型：
--
作者：
M. Takahasi
结合衍射理论和仪器背景，对原位同步辐射X射线衍射（XRD）在Ⅲ-Ⅴ族半导体分子束外延（MBE）生长中的应用进行了沿着综述。X射线不仅对生长膜的表面敏感，而且对掩埋的界面结构也敏感，因为它们的穿透深度很大。此外，高达微米量级的空间相干长度使X射线广泛适用于表征低维结构，如量子点和线。在生长过程中的原位XRD研究进行了使用X射线衍射仪，这是与MBE室相结合。X射线倒易空间映射的速度匹配一个典型的增长率，实现了使用强烈的X射线可从同步加速器光源和区域检测器。的重要性，测量的三维分布的XRD强度在倒易空间图的MBE生长的两个，一个，和零维结构证明。三维X射线倒易映射提供了大量关于二维InGaAs/GaAs（001）外延薄膜生长过程的信息，包括各向异性应变弛豫、组分不均匀性以及表面和界面粗糙度的演变。对于一维GaAs纳米线生长在Au催化的气-液-固模式，纳米线的直径和多型体的形成之间的关系已建议在原位XRD测量的基础上。原位三维X射线倒易空间映射也被证明是有用的，用于确定的横向和纵向尺寸的自组装InAs/GaAs（001）量子点，以及在生长过程中的内部应变分布。
The application of in situ synchrotron X-ray diffraction (XRD) to the molecular-beam epitaxial (MBE) growth of III–V semiconductors is overviewed along with backgrounds of the diffraction theory and instrumentation. X-rays are sensitive not only to the surface of growing films but also to buried interfacial structures because of their large penetration depth. Moreover, a spatial coherence length up to µm order makes X-rays widely applicable to the characterization of low-dimensional structures, such as quantum dots and wires. In situ XRD studies during growth were performed using an X-ray diffractometer, which was combined with an MBE chamber. X-ray reciprocal space mapping at a speed matching a typical growth rate was achieved using intense X-rays available from a synchrotron light source and an area detector. The importance of measuring the three-dimensional distribution of XRD intensity in a reciprocal space map is demonstrated for the MBE growth of two-, one-, and zero-dimensional structures. A large amount of information about the growth process of two-dimensional InGaAs/GaAs(001) epitaxial films has been provided by three-dimensional X-ray reciprocal mappings, including the anisotropic strain relaxation, the compositional inhomogeneity, and the evolution of surface and interfacial roughness. For one-dimensional GaAs nanowires grown in a Au-catalyzed vapor-liquid–solid mode, the relationship between the diameter of the nanowires and the formation of polytypes has been suggested on the basis of in situ XRD measurements. In situ three-dimensional X-ray reciprocal space mapping is also shown to be useful for determining the lateral and vertical sizes of self-assembled InAs/GaAs(001) quantum dots as well as their internal strain distributions during growth.
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配备聚焦单色仪的薄膜晶体生长原位观察X射线衍射仪的研制
DOI：
10.1002/pssc.201000508
发表时间：
2011
期刊：
Physica Status Solidi(c)
影响因子：
--
作者：
H. Tameoka;T. Kawase;M. Tabuchi;and Y. Takeda
通讯作者：
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影响因子：
4
作者：
LEONARD, D;KRISHNAMURTHY, M;PETROFF, PM
通讯作者：
PETROFF, PM
影响因子：
3.8
作者：
M. Takahasi;M. Kozu;T. Sasaki;Wen Hu
通讯作者：
M. Takahasi;M. Kozu;T. Sasaki;Wen Hu
In As/GaAs(001)量子点分子束外延生长的原位X射线衍射研究
影响因子：
1.8
作者：
M.Takahasi;J.Mizuki
通讯作者：
J.Mizuki
影响因子：
64.8
作者：
Jacobsson D;Panciera F;Tersoff J;Reuter MC;Lehmann S;Hofmann S;Dick KA;Ross FM
通讯作者：
Ross FM