Origin of the large voltage-controlled magnetic anisotropy in a Cr/Fe/MgO junction with an ultrathin Fe layer: First-principles investigation
Origin of the large voltage-controlled magnetic anisotropy in a Cr/Fe/MgO junction with an ultrathin Fe layer: First-principles investigation
复制标题
具有超薄 Fe 层的 Cr/Fe/MgO 结中大电压控制磁各向异性的起源:第一性原理研究
DOI:
10.1103/physrevb.101.144434
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发表时间:
2020-04
影响因子:
3.7
通讯作者:
Han X. F.
中科院分区:
文献类型:
--
作者:
Chen W. Z.;Jiang L. N.;Yan Z. R.;Zhu Y.;Wan C. H.;Han X. F.
Voltage-controlled magnetic anisotropy (VCMA) has attracted broad interest due to its high efficiency in switching magnetization. Large VCMA was experimentally observed in Cr/Fe/MgO junction with ultrathin Fe layer [Nozaki , Phys. Rev. Appl. 5, 044006 (2016)]2331-701910.1103/PhysRevApplied.5.044006, whose underlying mechanism was still not clear however. The Cr/Fe/MgO/Fe magnetic tunnel junction (MTJ) is also well known for its quantum-well (QW) states and as-induced spin-dependent resonant tunneling [Greullet , Phys. Rev. Lett. 99, 187202 (2007)]PRLTAO0031-900710.1103/PhysRevLett.99.187202. Here, in order to uncover the relation between the large VCMA and the QW states, we developed a-resolved VCMA calculation method combined with the second-order perturbation theory to investigate it. We find the VCMA coefficient reachesfJ/V m matching well with the previous experiment with three monolayers (MLs) of Fe. The coefficient oscillates strongly and even changes its sign with increasing the number of Fe MLs. Comparing the-resolved VCMA with the Fermi surface of the interfacial Fe atom, the screening charges theory for VCMA was verified. ForMLs Fe, interestingly, the QW states ofelectron at thepoint provide large (no) contribution to the VCMA with odd (even) MLs. Moreover, the change of the orbital-resolved Fermi surface at the interfacial Fe atom also plays an important role on VCMA oscillation, which as well as the QW states results in the largest VCMA for 3-ML Fe. Our results deepen the understanding of the large VCMA in the Cr/Fe/MgO junction, which would be helpful to design a practical MTJ with large VCMA.
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影响因子:
3.7
作者:
Nakamura, Kohji;Akiyama, Toru;Freeman, A. J.
通讯作者:
Freeman, A. J.
影响因子:
8.6
作者:
T. Niizeki;N. Tezuka;K. Inomata
通讯作者:
T. Niizeki;N. Tezuka;K. Inomata
影响因子:
4.6
作者:
Kozioł-Rachwał A;Nozaki T;Freindl K;Korecki J;Yuasa S;Suzuki Y
通讯作者:
Suzuki Y
影响因子:
8.6
作者:
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通讯作者:
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影响因子:
3.7
作者:
Kresse, G;Furthmuller, J
通讯作者:
Furthmuller, J