Thickness dependence of the molecular magnetic moment of single crystal Fe3O4 films on GaAs (100)
Thickness dependence of the molecular magnetic moment of single crystal Fe3O4 films on GaAs (100)
复制标题
GaAs 上单晶 Fe3O4 薄膜分子磁矩的厚度依赖性 (100)
DOI：
10.1063/1.3352577
复制
发表时间：
2010-05
影响因子：
3.2
通讯作者：
中科院分区：
文献类型：
--
作者：
本文研究了在GaAs（100）表面生长的不同厚度的外延Fe_3O_4薄膜的磁滞回线和饱和磁化强度。从测量的饱和磁矩的膜和Fe离子在每个膜中的数量从测量的氧化前的Fe膜的厚度和膜面积计算的数据，获得的分子磁矩的氧化膜。结果表明，厚度为4nm和6nm的薄膜的分子磁矩值与磁铁矿的理论体积值接近。对于8 nm的膜厚度，观察到较大的磁化强度，可能是由于较深的Fe层的氧化较少。2 nm厚薄膜的最大磁矩较低，这是由于薄膜结构的不完整性造成的。膜的低结晶度表明膜的质量相当好。
The hysteresis loops and the saturation magnetization of the epitaxial Fe3O4 ultrathin films with different thicknesses grown on the GaAs (100) surface have been studied. The molecular magnetic moment of the ultrathin films was obtained from the data of the measured saturation magnetic moment of the films and the number of Fe ions in each film calculated from the measured thickness of Fe films before oxidation and film area. It was found that the values of the molecular magnetic moment of films with thicknesses of 4 and 6 nm were close to the theoretical bulk value of magnetite. For the film thickness of 8 nm, larger magnetization was observed probably caused by less oxidation of the deeper Fe layer. The maximum magnetic moment of the film of 2 nm thick was lower due to the structure imperfection. The low coercivity of the films indicated that the quality of the films was reasonably good.
登录
查看更多内容
影响因子：
2.1
作者：
P. Wong;Wen Zhang;Yongbing Xu;S. Hassan;S. Thompson
通讯作者：
P. Wong;Wen Zhang;Yongbing Xu;S. Hassan;S. Thompson
影响因子：
3.5
作者：
Pickett, WE;Moodera, JS
通讯作者：
Moodera, JS
影响因子：
3.7
作者：
Xu, YB;Kernohan, ETM;Bland, JAC
通讯作者：
Bland, JAC
影响因子：
3.2
作者：
Li, XW;Gupta, A;Gong, GQ
通讯作者：
Gong, GQ
影响因子：
3.7
作者：
Gong, GQ;Gupta, A;Dravid, VP
通讯作者：
Dravid, VP