Investigating the Effect of Steric Hindrance within CdS Single-Source Precursors on the Material Properties of AACVD and Spin-Coat-Deposited CdS Thin Films.

Investigating the Effect of Steric Hindrance within CdS Single-Source Precursors on the Material Properties of AACVD and Spin-Coat-Deposited CdS Thin Films.
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DOI:
10.1021/acs.inorgchem.2c00616
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发表时间:
2022-05-30
影响因子:
4.6
通讯作者:
Lewis, David J.
Lewis, David J.
中科院分区:
化学2区
文献类型:
--
作者:
Buckingham, Mark A.;Norton, Kane;McNaughter, Paul D.;Whitehead, George;Vitorica-Yrezabal, Inigo;Alam, Firoz;Laws, Kristine;Lewis, David J.

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硫化镉(CdS)是用于电子和光伏应用的重要半导体,特别是当用作CdTe太阳能电池中的窗口层的薄膜时。通过单源前体的分解沉积薄膜CdS是一种有吸引力的方法,由于这种方法的简便,低温和快速的性质。调整前体以影响分解性质通常用于调节期望的分解温度。然而,改变前体结构及其对沉积材料性质的影响是一个很少研究的领域。在这里,我们试图通过改变镉金属中心周围的配体来增加前体的空间位阻,并研究这对分解性能和从这些前体沉积薄膜CdS的性能的影响。为此,我们报道了四种具有黄原酸盐和吡啶基配体的CdS前体的合成([Cd(n-乙基黄原酸盐)2(3-甲基吡啶)2] [1],[Cd(n-乙基黄原酸盐)2(3,5-二甲基吡啶)2] [2],[(Cd 2(异丙基黄原酸盐)4(3-甲基吡啶)2)n] [3]和[Cd(异丙基黄原酸盐)2(3,5-二甲基吡啶)2] [4])。通过元素分析、核磁共振谱、单晶X射线衍射和热重分析对这些CdS单源前驱体进行了表征。结果发现,即使在黄原酸酯(n-乙基异丙基)和吡啶(3-甲基和3,5-二甲基)配体的细微变化,形成了一系列的六配位前体(两个顺式构型,一个反式构型,一个作为一维(1D)聚合物)。这四个前体,然后使用气溶胶辅助化学气相沉积(AACVD)和旋涂实验存款8薄膜的CdS,其特征在于通过拉曼光谱,粉末X-射线衍射,和扫描电子显微镜。关于薄膜厚度和表面粗糙度的比较定量信息也由原子力显微镜测定。最后,所有薄膜的光学性质通过紫外-可见(UV-Vis)吸收光谱来表征,由此确定每个沉积膜的带隙与块状CdS的带隙相当(约100 nm)。2.4 eV)。基于黄原酸盐和吡啶基衍生配体的组合,合成了四种单源CdS前体,以研究增加前体的空间位阻。开发了两个顺式,一个反式和一个一维聚合物复合物。这些前体,然后沉积为薄膜,通过旋涂和气溶胶辅助化学气相沉积技术,和形态,膜厚度,膜表面粗糙度,粒度分布,和带隙能量进行了评估。
Cadmium sulfide (CdS) is an important semiconductor for electronic and photovoltaic applications, particularly when utilized as a thin film for window layers in CdTe solar cells. Deposition of thin-film CdS through the decomposition of single-source precursors is an attractive approach due to the facile, low-temperature, and rapid nature of this approach. Tailoring the precursor to affect the decomposition properties is commonly employed to tune desirable temperatures of decomposition. However, altering the precursor structure and the effect this has on the nature of the deposited material is an area far less commonly investigated. Here, we seek to investigate this by altering the ligands around the Cd metal center to increase the steric hindrance of the precursor and investigate the effect this has on the decomposition properties and the properties of deposited thin-film CdS from these precursors. For this, we report the synthesis of four CdS precursors with xanthate and pyridyl ligands ([Cd(n-ethyl xanthate)2(3-methyl pyridine)2] [1], [Cd(n-ethyl xanthate)2(3,5-lutidine)2] [2], [(Cd2(isopropyl xanthate)4(3-methyl pyridine)2)n] [3], and [Cd(isopropyl xanthate)2(3,5-lutidine)2] [4]). These single-source precursors for CdS were fully characterized by elemental analysis, NMR spectroscopy, single-crystal X-ray diffraction (XRD), and thermogravimetric analysis. It was found that even with subtle alterations in the xanthate (n-ethyl to isopropyl) and pyridine (3-methyl and 3,5-dimethyl) ligands, a range of hexa-coordinate precursors were formed (two with cis configuration, one with trans configuration, and one as a one-dimensional (1D) polymer). These four precursors were then used in aerosol-assisted chemical vapor deposition (AACVD) and spin-coating experiments to deposit eight thin films of CdS, which were characterized by Raman spectroscopy, powder X-ray diffraction, and scanning electron microscopy. Comparative quantitative information concerning film thickness and surface roughness was also determined by atomic force microscopy. Finally, the optical properties of all thin films were characterized by ultraviolet–visible (UV–Vis) absorption spectroscopy, from which the band gap of each deposited film was determined to be commensurate with that of bulk CdS (ca. 2.4 eV). Four single-source CdS precursors were synthesized based on a combination of xanthate- and pyridyl-derived ligands to investigate increasing the steric hindrance of the precursor. Two cis, one trans, and one 1D polymer complexes were developed. These precursors were then deposited as thin films through both spin coating and aerosol-assisted chemical vapor deposition techniques, and the morphology, film thickness, film surface roughness, particle size distribution, and band gap energy were assessed.
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