Structural, electrical and magnetic properties of Fe-Co-Cr and Fe-Co-Cr-N nanocrystalline alloy films
Structural, electrical and magnetic properties of Fe-Co-Cr and Fe-Co-Cr-N nanocrystalline alloy films
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Fe-Co-Cr和Fe-Co-Cr-N纳米晶合金薄膜的结构、电学和磁学性能
DOI：
10.1016/j.jallcom.2008.07.047
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发表时间：
2009-05
影响因子：
6.2
通讯作者：
Peng, D. L.
中科院分区：
文献类型：
--
作者：
Yue, G. H.;Chen, Y.;Wang, W.;Bai, H. L.;Mi, W. B.;Peng, D. L.
采用室温磁控共溅射法制备了Fe-Co-Cr和Fe-Co-Cr - n薄膜，并用各种分析技术对其结构、电学和磁学性能进行了测试。结果表明，随着cr靶功率的增大，Fe-Co-Cr薄膜的电阻率增大，表面形貌发生变化。随着氮气流量比的增大，Fe-Co-Cr-N薄膜的晶粒尺寸减小，电阻率单调增大。Fe-Co-Cr薄膜软磁性能最好，在cr靶功率为80W时，饱和磁化强度（Ms）较高，为1.77Wb/m2，矫顽力（Hc）较小，为748A/m； Fe-Co-Cr - n薄膜软磁性能最好，在氮气流量比为20%时，饱和磁化强度（Ms）较高，为1.64Wb/m2，矫顽力（Hc）最低，为279Wb/m2。讨论了氮、铬在feco基薄膜中的晶粒细化机理。
Fe–Co–Cr and Fe–Co–Cr–N thin films were fabricated by magnetron co-sputtering at room temperature, and their structural, electrical and magnetic properties were examined by various analytic techniques. It was observed that with the increase of Cr-target power, for Fe–Co–Cr thin films the resistivity increased and surface morphology was changed. As the nitrogen gas flow ratio increased, for Fe–Co–Cr–N thin films the grain size decreased and the resistivity monotonically increased. Fe–Co–Cr thin films exhibited the best soft-magnetic properties with a relatively large saturation magnetization (Ms) of 1.77Wb/m2and a small coercivity (Hc) of 748A/m at a Cr-target power of 80W, whereas Fe–Co–Cr–N thin films had the best soft-magnetic properties with a high saturation magnetization (Ms) of 1.64Wb/m2and a minimum coercivity (Hc) of 279Wb/m2at a nitrogen gas flow ratio of 20%. The grain refinement mechanism of chromium and nitrogen in the FeCo-based films was also discussed.
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影响因子：
3.2
作者：
YOSHIZAWA, Y;OGUMA, S;YAMAUCHI, K
通讯作者：
YAMAUCHI, K
影响因子：
3.2
作者：
F. V. Belle;T. Hayward;J. Bland;W. Lew
通讯作者：
F. V. Belle;T. Hayward;J. Bland;W. Lew
影响因子：
4
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通讯作者：
Y. Liu;C. Tan;Zhongwu Liu;C. Ong
影响因子：
3.2
作者：
P. Kuo;S. Chang;C. Kuo;Y. Yao;H. L. Huang
通讯作者：
P. Kuo;S. Chang;C. Kuo;Y. Yao;H. L. Huang
影响因子：
2.1
作者：
Inyoung Kim;Jongryoul Kim;Ki Hyeon Kim;M. Yamaguchi
通讯作者：
Inyoung Kim;Jongryoul Kim;Ki Hyeon Kim;M. Yamaguchi