A Novel Structure to Reduce Degradation Under Mechanical Bending in Foldable Low Temperature Polysilicon TFTs Fabricated on Polyimide
A Novel Structure to Reduce Degradation Under Mechanical Bending in Foldable Low Temperature Polysilicon TFTs Fabricated on Polyimide
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一种减少聚酰亚胺上制造的可折叠低温多晶硅 TFT 机械弯曲退化的新结构
DOI：
10.1109/led.2020.2979276
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发表时间：
2020
影响因子：
4.9
通讯作者：
S. Sze
中科院分区：
文献类型：
--
作者：
Yu‐Xuan Wang;T. Chang;Shin;Mao‐Chou Tai;Yu;Chia;Yu;Yu;Y. Tsai;Hong;I;Kuan;Chih;A. Chu;S. Sze
在这项研究中，一种新的结构设备，命名为翼形TFT，提出并证明，以防止快速恶化下的机械弯曲可折叠设备。在长期机械弯曲之后，标准低温多晶硅TFT表现出诸如子沟道形成、严重的阈值电压漂移、导通电流（ION）增加和截止电流（IOFF）减小的不稳定行为。这些现象被认为是由于在弯曲之后沿着栅极绝缘体的沟道宽度边缘沿着的附加氧化物陷阱。为了抑制这种退化，提出了一种翼形结构。通过延伸有源层，退化区域远离主沟道。因此，提高了器件的可靠性。在静态弯曲条件下保持48小时后，转移特性显示出增强的电行为，阈值电压偏移下降88%，亚阈值摆动退化下降55%，证明具有这些翼的器件的可折叠TFT对弯曲应力的耐久性更好。时间相关的传输特性，COMSOL模拟，和设备的几何形状进行了讨论，以支持我们的研究结果。
In this study, a novel structural device, named as a wing-shaped TFT, is proposed and is demonstrated to prevent fast deterioration under mechanical bending in foldable devices. After long-term mechanical bending, standard low-temperature polysilicon TFTs exhibit instability behaviors such as sub-channel formation, serious threshold voltage shifts, an on-current (ION) increase, and an off-current (IOFF) decrease. These phenomena are believed to be due to additional oxide traps along the channel-width edges of the gate insulator after bending. In order to suppress this degradation, a wing-shaped structure is proposed. By extending the active layer, degradation regions are shifted away from the main channel. Therefore, the reliability of the devices is enhanced. The transfer characteristics show enhanced electrical behavior after being held for 48 hours in a static bent condition, with an 88% drop in threshold voltage shift as well as a 55% decrease in subthreshold swing degradation, proving better durability of the foldable TFT to bending stress for devices with these wings. Time-dependent transfer characteristics, a COMSOL simulation, and device geometry are discussed to support our findings.
影响因子：
64.8
作者：
Nomura, K;Ohta, H;Hosono, H
通讯作者：
Hosono, H
影响因子：
4.9
作者：
SAMESHIMA, T;USUI, S;SEKIYA, M
通讯作者：
SEKIYA, M