Electrodeposited tungsten oxide films onto porous silicon for NO 2 detection at room temperature
Electrodeposited tungsten oxide films onto porous silicon for NO 2 detection at room temperature
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多孔硅上电沉积氧化钨薄膜用于室温 NO 2 检测
DOI：
10.1016/j.jallcom.2017.11.175
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发表时间：
2018-02
影响因子：
6.2
通讯作者：
Meng Cao
中科院分区：
文献类型：
--
作者：
Dali Yan;Shenyu Li;Shiyu Liu;Ming Tan;Meng Cao
在多孔硅（PS）表面电化学沉积氧化钨薄膜，然后在空气中退火，制备了氧化钨薄膜/多孔硅（WO 3/PS）复合材料。采用扫描电镜（SEM）、X射线衍射（XRD）和拉曼光谱（RS）对产物进行了表征。研究了WO 3/PS复合材料在室温（RT，125 °C）~ 200 °C范围内对NO2的气敏性能。结果表明，所有的WO 3/PS气敏元件均表现出典型的p型半导体特性，并存在一个最佳的工作温度RT。与PS相比，适当沉积的WO 3/PS复合材料在RT下具有更高的气体响应、更短的响应恢复时间、良好的重复性和对NO2气体的选择性，这可能与其异质结效应和独特的微结构特性有关。此外，本文还对可能的NO2敏感机理进行了探讨。
Here we prepare a composite of tungsten oxide films/porous silicon (WO3/PS) hybrid structure synthesized by electrochemical deposition of WO3films onto p-type PS with subsequent annealing process in air. The obtained WO3/PS products were investigated by scanning electron microscopy (SEM), X-ray diffraction (XRD) and Raman spectroscopy (RS). The gas-sensing properties of WO3/PS composite to NO2ranging from room temperature (RT, ∼25 °C) to 200 °C were studied. The result indicated that all the WO3/PS gas sensors showed typical p-type semiconductor behavior and had an optimal working temperature of RT. Furthermore, compared with PS, the proper deposited WO3/PS composite exhibited a higher gas response, shorter response-recovery time, good repeatability and selectivity toward NO2gas at RT. This improvement probably owing to the heterojunction effect and its unique microstructure properties. In addition, the possible NO2-sensing mechanisms were also discussed in this paper.
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影响因子：
8.4
作者：
Priyanka Dwivedi;N. Chauhan;P. Vivekanandan;Samaresh Das;D. Kumar;S. Dhanekar
通讯作者：
Priyanka Dwivedi;N. Chauhan;P. Vivekanandan;Samaresh Das;D. Kumar;S. Dhanekar
影响因子：
8.4
作者：
Y. Sadaoka;M. Mori
通讯作者：
Y. Sadaoka;M. Mori
影响因子：
8.4
作者：
Preiss, Elisabeth M.;Krauss, Andreas;Seidel, Helmut
通讯作者：
Seidel, Helmut
DOI：
10.1007/s00339-012-7000-9
发表时间：
2012-05
期刊：
Applied Physics A
影响因子：
--
作者：
Soyeon An;Sunghoon Park;H. Ko;Chongmu Lee
通讯作者：
Soyeon An;Sunghoon Park;H. Ko;Chongmu Lee
影响因子：
8.4
作者：
Urasinska-Wojcik, Barbara;Vincent, Timothy A.;Gardner, Julian W.
通讯作者：
Gardner, Julian W.