Structure and energy storage performance of lanthanide elements doped AgNbO3 lead-free antiferroelectric ceramics

Structure and energy storage performance of lanthanide elements doped AgNbO3 lead-free antiferroelectric ceramics
复制标题

镧系元素掺杂AgNbO3无铅反铁电陶瓷的结构与储能性能

DOI:
10.1016/j.jeurceramsoc.2021.12.074
复制
发表时间:
2021-12
影响因子:
5.7
通讯作者:
Nengneng Luo
Nengneng Luo
中科院分区:
材料科学1区
文献类型:
--
作者:
Li Ma;Zhenpei Chen;Zhiyi Che;Qin Feng;Zhenyong Cen;Toyohisa Fujita;Yuezhou Wei;Changzheng Hu;Laijun Liu;Nengneng Luo

文献摘要

参考文献

相似文献

·与原始AgNbO 3相比,在所有镧系元素离子掺杂的ReAN样品中实现了明显增强的AFE稳定性。·镧系离子可以进入A或B位点,导致AFE稳定性和耐受因子的复杂变化。·在250 kV/cm下,对于从SmAN到TbAN的组合物,Wrec和η分别达到约4.5 J/cm 3和65%。·对AgNbO 3系稀土元素掺杂的研究提供了一个全面的认识。银酸盐(AgNbO 3,AN)反铁电材料的A位异价改性在提高其储能性能方面已取得了一定的进展,但对其认识还不够全面。本文研究了3mol%镧系元素(Re:Sm,Eu,Gd,Tb,Dy,Ho,Er,Tm)对AgNbO 3(ReAN)陶瓷的改性。与纯AN相比,ReAN陶瓷的M1-M2相变温度降低,并出现典型的类双P-E环。由于容差因子的减小,反铁电性先从SmAN提高到TbAN,然后由于部分Re 3+离子进入B位,反铁电性随原子序数的增加而衰减。在250 kV/cm电压下,SmAN到TbAN的混合物可获得高的能量密度(W rec = 4.5J/cm 3)和效率(η = 65%).而随着原子序数的增加,W_(rec)和η普遍降低。本研究对AgNbO 3系镧系元素的掺杂有了较全面的认识.
• Evidently enhanced AFE stability is achieved in all lanthanide ions doped ReAN samples compared to pristine AgNbO 3 . • Lanthanide ions can enter either A- or B-site, leading to a complex change of AFE stability and tolerance factor. • Wrec and η are achieved to be respective around 4.5 J/cm 3 and 65 % for compositions from SmAN to TbAN under 250 kV/cm. • This study provides a comprehensive knowledge of lanthanide element dopants in AgNbO 3 system. The aliovalent A-site modification in Silver niobate (AgNbO 3 , AN) antiferroelectrics has exhibited its advances in improving energy storage performance, but lack of a comprehensive understanding. In this work, 3 mol% lanthanide elements (Re: Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm) modified AgNbO 3 (ReAN) ceramics were investigated. Compared with pristine AN, the ReAN ceramics exhibited decreased M1-M2 phase transition temperature and typical double-like P - E loops. The antiferroelectricity improved firstly from SmAN to TbAN because of reduction of tolerance factor, then it decayed with increasing atomic number due to partial Re 3+ ions entering into B-site. Consequently, high recoverable energy density ( W rec ≈ 4.5 J/cm 3 ) and efficiency ( η ≈ 65 %) were achieved for the compositions from SmAN to TbAN under 250 kV/cm. While a general decrease in W rec and η was observed by further increasing atomic number. This study provides a comprehensive knowledge of lanthanide element dopants in AgNbO 3 system.
DOI: 10.1016/j.nanoen.2020.105423
发表时间: 2021-01-01
期刊: NANO ENERGY
影响因子: 17.6
作者:
Lu, Zhilun;Bao, Weichao;Reaney, Ian M.
通讯作者: Reaney, Ian M.
DOI: 10.1039/d0ta08345c
发表时间: 2020-11
影响因子: --
作者:
Dong Yang;Jing Gao;Liang Shu;Yi‐Xuan Liu;J. Yu;Yuanyuan Zhang;Xuping Wang;Boping Zhang
通讯作者: Dong Yang;Jing Gao;Liang Shu;Yi‐Xuan Liu;J. Yu;Yuanyuan Zhang;Xuping Wang;Boping Zhang
B位受主掺杂AgNbO3无铅反铁电陶瓷:掺杂剂对微观结构和击穿强度的作用
DOI: 10.1016/j.ceramint.2020.09.222
发表时间: 2020-09
影响因子: 5.2
作者:
Xin Wang;Pengrong Ren;Dong Ren;Linfeng Xie;Tingting Li;Junqi Xu;Yingxue Xi;Chen Yang
通讯作者: Chen Yang
在Agnbo中构建相边界(3)抗fiferroelectrics:同时达到高能量密度和效率的途径。
DOI: 10.1038/s41467-020-18665-5
发表时间: 2020-09-24
影响因子: 16.6
作者:
Luo N;Han K;Cabral MJ;Liao X;Zhang S;Liao C;Zhang G;Chen X;Feng Q;Li JF;Wei Y
通讯作者: Wei Y
DOI: 10.1016/j.jeurceramsoc.2020.05.076
发表时间: 2020-10
影响因子: 5.7
作者:
Pengrong Ren;Dong Ren;Liang Sun;Fuxue Yan;Shu Yang;Gaoyang Zhao
通讯作者: Pengrong Ren;Dong Ren;Liang Sun;Fuxue Yan;Shu Yang;Gaoyang Zhao