Structure and energy storage performance of lanthanide elements doped AgNbO3 lead-free antiferroelectric ceramics
Structure and energy storage performance of lanthanide elements doped AgNbO3 lead-free antiferroelectric ceramics
复制标题
镧系元素掺杂AgNbO3无铅反铁电陶瓷的结构与储能性能
DOI:
10.1016/j.jeurceramsoc.2021.12.074
复制
发表时间:
2021-12
影响因子:
5.7
通讯作者:
Nengneng Luo
中科院分区:
文献类型:
--
作者:
Li Ma;Zhenpei Chen;Zhiyi Che;Qin Feng;Zhenyong Cen;Toyohisa Fujita;Yuezhou Wei;Changzheng Hu;Laijun Liu;Nengneng Luo
• Evidently enhanced AFE stability is achieved in all lanthanide ions doped ReAN samples compared to pristine AgNbO 3 . • Lanthanide ions can enter either A- or B-site, leading to a complex change of AFE stability and tolerance factor. • Wrec and η are achieved to be respective around 4.5 J/cm 3 and 65 % for compositions from SmAN to TbAN under 250 kV/cm. • This study provides a comprehensive knowledge of lanthanide element dopants in AgNbO 3 system. The aliovalent A-site modification in Silver niobate (AgNbO 3 , AN) antiferroelectrics has exhibited its advances in improving energy storage performance, but lack of a comprehensive understanding. In this work, 3 mol% lanthanide elements (Re: Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm) modified AgNbO 3 (ReAN) ceramics were investigated. Compared with pristine AN, the ReAN ceramics exhibited decreased M1-M2 phase transition temperature and typical double-like P - E loops. The antiferroelectricity improved firstly from SmAN to TbAN because of reduction of tolerance factor, then it decayed with increasing atomic number due to partial Re 3+ ions entering into B-site. Consequently, high recoverable energy density ( W rec ≈ 4.5 J/cm 3 ) and efficiency ( η ≈ 65 %) were achieved for the compositions from SmAN to TbAN under 250 kV/cm. While a general decrease in W rec and η was observed by further increasing atomic number. This study provides a comprehensive knowledge of lanthanide element dopants in AgNbO 3 system.
登录
查看更多内容
影响因子:
17.6
作者:
Lu, Zhilun;Bao, Weichao;Reaney, Ian M.
通讯作者:
Reaney, Ian M.
影响因子:
--
作者:
Dong Yang;Jing Gao;Liang Shu;Yi‐Xuan Liu;J. Yu;Yuanyuan Zhang;Xuping Wang;Boping Zhang
通讯作者:
Dong Yang;Jing Gao;Liang Shu;Yi‐Xuan Liu;J. Yu;Yuanyuan Zhang;Xuping Wang;Boping Zhang
影响因子:
5.2
作者:
Xin Wang;Pengrong Ren;Dong Ren;Linfeng Xie;Tingting Li;Junqi Xu;Yingxue Xi;Chen Yang
通讯作者:
Chen Yang
影响因子:
16.6
作者:
Luo N;Han K;Cabral MJ;Liao X;Zhang S;Liao C;Zhang G;Chen X;Feng Q;Li JF;Wei Y
通讯作者:
Wei Y
影响因子:
5.7
作者:
Pengrong Ren;Dong Ren;Liang Sun;Fuxue Yan;Shu Yang;Gaoyang Zhao
通讯作者:
Pengrong Ren;Dong Ren;Liang Sun;Fuxue Yan;Shu Yang;Gaoyang Zhao