High utilization ratio of metal organic sources for MOCVD-derived GdYBCO films based on a narrow channel reaction chamber
High utilization ratio of metal organic sources for MOCVD-derived GdYBCO films based on a narrow channel reaction chamber
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基于窄通道反应室的MOCVD衍生GdYBCO薄膜金属有机源的高利用率
DOI：
10.1088/1361-6668/aa9a6d
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发表时间：
2017
影响因子：
3.6
通讯作者：
Li Yanrong
中科院分区：
文献类型：
--
作者：
Zhao Ruipeng;Liu Qing;Xia Yudong;Tang Hao;Lu Yuming;Cai Chuanbing;Tao Bowan;Li Yanrong
在自制的MOCVD系统中设计了窄通道反应室，并应用于在LaMnO 3/外延MgO/IBAD-MgO/溶液沉积平坦化-Y2 O3缓冲哈氏合金带模板上存款GdYBCO薄膜。在反应室中，金属有机源沿着带移动的方向沿着从入口转移到出口。因此，与金属有机源的垂直注入方式相比，通过采用新型反应室将延长金属有机源在衬底表面上的停留时间。因此，根据实验测定结果计算，金属有机源的利用率可达31%。此外，基于新型反应室的金属有机源利用率基本上是常用垂直注入狭缝簇射的两倍。此外，通过调整工艺，卷到卷方式制备的300 nm厚GdYBCO薄膜的临界电流密度达到了3.2 MA cm-2（77 K，0 T）。
A narrow channel reaction chamber is designed in our home-made MOCVD system and applied to deposit GdYBCO films on the template of LaMnO3/epitaxial MgO/IBAD-MgO/solution deposition planarization-Y2O3-buffered Hastelloy tapes. In the reaction chamber, metal organic sources are transferred from the inlet to the outlet along the direction of the tape movement. Thus, compared to the vertical injection way of metal organic sources, the residence time of metal organic sources on the surface of substrates would be extended through adopting the novel reaction chamber. Therefore, the utilization of metal organic sources, which is calculated according to the measured results of experiments, can reach 31%. Additionally, the utilization ratio of metal organic sources based on the novel reaction chamber is basically two times as much as that of the commonly used vertical injection slit shower. What is more, through adjusting the process, the critical current density of 300 nm thick GdYBCO film prepared the reel-to-reel way has reached 3.2 MA cm−2 (77 K, 0 T).
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影响因子：
1.7
作者：
S. Mukoyama;M. Yagi;N. Hirano;N. Amemiya;N. Kashima;S. Nagaya;T. Izumi;Y. Shiohara
通讯作者：
S. Mukoyama;M. Yagi;N. Hirano;N. Amemiya;N. Kashima;S. Nagaya;T. Izumi;Y. Shiohara
DOI：
10.1016/j.phpro.2012.03.445
发表时间：
2012
期刊：
Physics Procedia
影响因子：
--
作者：
Y. Takagi;Y. Takahashi;K. Nakaoka;M. Yoshizumi;N. Akagi;S. Takahashi;T. Izumi;Y. Shiohara
通讯作者：
Y. Takagi;Y. Takahashi;K. Nakaoka;M. Yoshizumi;N. Akagi;S. Takahashi;T. Izumi;Y. Shiohara
影响因子：
3.6
作者：
Feldmann, D. M.;Holesinger, T. G.;Apodoca, I.
通讯作者：
Apodoca, I.
DOI：
10.1007/s00339-015-9575-4
发表时间：
2016-01
期刊：
Applied Physics A
影响因子：
--
作者：
Fei Zhang;R. Zhao;Yan Xue;Hui Wang;Yuanying He;Pan Zhang;B. Tao;J. Xiong;Yanrong Li
通讯作者：
Fei Zhang;R. Zhao;Yan Xue;Hui Wang;Yuanying He;Pan Zhang;B. Tao;J. Xiong;Yanrong Li
影响因子：
3.6
作者：
Badel, Arnaud;Tixador, Pascal;Deleglise, Marc
通讯作者：
Deleglise, Marc