Exploratory phase stabilization in heteroepitaxial gallium oxide films by pulsed laser deposition
Exploratory phase stabilization in heteroepitaxial gallium oxide films by pulsed laser deposition
复制标题
通过脉冲激光沉积探索异质外延氧化镓薄膜的相稳定性
DOI：
10.1016/j.jallcom.2022.168123
复制
发表时间：
2022-11
影响因子：
6.2
通讯作者：
Jichun Ye
中科院分区：
文献类型：
--
作者：
Jianguo Zhang;Wei Wang;Simiao Wu;Zhiming Geng;Jinfu Zhang;Li Chen;Ningtao Liu;Xuejun Yan;Wenrui Zhang;Jichun Ye
氧化镓（Ga 2 O3）的特点是具有各种类型的多晶型物，这些多晶型物在广泛的应用中表现出独特的特性。不同的Ga 2 O3多晶型物的选择性稳定是非常需要的，但通常受到杂质相形成的限制。在这里，我们报告的控制生长的亚稳态氧化镓薄膜的脉冲激光沉积（PLD），并探索一个全面的相演变图片调整的关键合成参数，衬底取向，和外来锡（Sn）掺杂剂。通过选择a面蓝宝石衬底，我们证明了未掺杂和Sn掺杂的α-Ga 2 O3薄膜的稳定性，并发现Sn掺杂可以大大拓宽α-Ga 2 O3的生长窗口。此外，Sn掺杂的ε-Ga 2 O3比β-Ga 2 O3更有利于稳定在c面衬底上，氧分压是决定ε-Ga 2 O3形成的关键因素。研究了这些亚稳态Ga 2 O 3薄膜的结构对热输运的影响，结果表明，α-Ga 2 O 3薄膜的最大热输运值为5.66 Wm− 1 K − 1，非晶Ga 2 O 3薄膜的最小热输运值为1.04 Wm− 1 K − 1。这些阶段的原生缺陷是敏感的Sn掺杂，表现出不同的深紫外光探测响应。本研究建立了介稳Ga_2 O_3多晶型物的PLD合成准则，并为不同晶相过渡金属氧化物的选择性相稳定提供了依据。
Gallium oxide (Ga2O3) is featured by various types of polymorphs that exhibit distinct properties for a broad range of applications. Selective stabilization of distinct Ga2O3polymorphs is highly desired, but is usually limited by impurity phase formation. Here we report the controlled growth of metastable gallium oxide films by pulsed laser deposition (PLD), and explore a comprehensive phase evolution picture tuned by key synthesis parameters, substrate orientations, and extrinsic tin (Sn) dopants. We demonstrate the stabilization of both undoped and Sn-dopedα-Ga2O3films by selecting a-plane sapphire substrates, and find that Sn dopants can largely broaden the growth window ofα-Ga2O3. Besides, Sn-dopedε-Ga2O3is more favored thanβ-Ga2O3to be stabilized on c-plane substrates, and the oxygen pressure is the critical factor to dictate theε-Ga2O3formation. The structural impact on the thermal transport among these metastable Ga2O3films is investigated, which shows a maximum value of 5.66 Wm−1K−1inα-Ga2O3and a minimum value of 1.04 Wm−1K−1in amorphous Ga2O3. The native defects of these phases are sensitive to the Sn doping, which exhibits distinct response for deep ultraviolet photodetection. This study establishes a synthesis guideline of metastable Ga2O3polymorphs by PLD and provides insights into selective phase stabilization of transition metal oxides with various crystal phases.
登录
查看更多内容
β-Ga2O3 与 epsilon-Ga2O3：金属有机化学气相沉积制备氧化镓薄膜晶相组成的控制
影响因子：
6.7
作者：
Zhuo Yi;Chen Zimin;Tu Wenbin;Ma Xuejin;Pei Yanli;Wang Gang
通讯作者：
Wang Gang
WxMo1-xTe2 热导率中成分相关的相变及其诱发的滞后效应
影响因子：
4
作者：
Xue-Jun Yan;Yang-Yang Lv;Lei Li;Xiao Li;Shu-Hua Yao;Yan-Bin Chen;Xiao-Ping Liu;Hong Lu;Ming-Hui Lu;Yan-Feng Chen
通讯作者：
Yan-Feng Chen
影响因子：
1.5
作者：
Shinohara, Daisuke;Fujita, Shizuo
通讯作者：
Fujita, Shizuo
影响因子：
4
作者：
Wenrui Zhang;Jianguo Zhang;Li Chen;Wei Wang-;Tan Zhang;Ningtao Liu;Tao Xu;Hongxin Yang;Jichun Ye
通讯作者：
Wenrui Zhang;Jianguo Zhang;Li Chen;Wei Wang-;Tan Zhang;Ningtao Liu;Tao Xu;Hongxin Yang;Jichun Ye
影响因子：
2.8
作者：
Guo, Daoyou;Wu, Zhenping;Tang, Weihua
通讯作者：
Tang, Weihua