Influence of metals for rear metallization on c-Si solar cells

Influence of metals for rear metallization on c-Si solar cells
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背面金属化金属对晶硅太阳能电池的影响

DOI:
10.1007/s10854-018-0165-z
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发表时间:
2018-10
期刊:
Journal of Materials Science: Materials in Electronics
影响因子:
--
通讯作者:
Xiaowei Li
Xiaowei Li
中科院分区:
其他
文献类型:
--
作者:
Zhiping Huang;Deyuan Wei;Jianhui Chen;Ren He;Ying Xu;Xiaowei Li

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随着新型n型晶体硅基太阳能电池的发展,无需热处理工艺的背面金属化的低功函数金属兼容性引起了人们的广泛关注。在这项研究中,我们展示了接触特性和性能的n-Pasha太阳能电池与Hf/Ag,Mg/Ag和Ag作为背面金属化层。具有Mg接触层的n-Pasha太阳能电池实现了0.24 Ω的串联电阻,而Hf和Ag分别为0.82 Ω和1.52 Ω。可见,具有Mg背面金属化的n型晶体硅太阳能电池具有优异的接触特性。与Ag接触相比,Mg接触的开路电压和填充因子分别增加了9%(相对),增益为47 mV和1.3%(绝对)。与Ag接触相比,Mg接触的所得功率转换效率获得了1.5%(绝对)和10.5%(相对)的增益。因此,这种新技术可以准确地满足新型n型硅基太阳能电池背面金属化的需求。
With the development of novel n-type crystalline silicon based solar cells, low work function metals compatibility for rear metallization without heat treatment process motivate much attention. In this study, we demonstrate contact characteristics and performances of n-Pasha solar cells with Hf/Ag, Mg/Ag and Ag as rear metallization layers. n-Pasha solar cells with Mg contact layer achieved a series resistance of 0.24 Ω in contrast to Hf of 0.82 Ω and Ag of 1.52 Ω, respectively. It is visible that n-type crystalline silicon solar cell with Mg rear metallization exhibits excellent contact characteristic. In contrast to Ag contact, the open circuit voltage and fill factor of Mg contact were increased by 9% (relative) with a gain of 47 mV and 1.3% (absolute), respectively. The resultant power conversion efficiency of Mg contact obtained a gain of 1.5% (absolute) and 10.5% (relative) compared with Ag contact. Thus, this new technique can be exactly catering for demands of rear metallization for novel n-type silicon based solar cells.
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