Spin-dependent transport in a ZnMnO∕ZnO heterostructure
Spin-dependent transport in a ZnMnO∕ZnO heterostructure
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ZnMnO∕ZnO 异质结构中的自旋相关输运
DOI：
10.1063/1.2837882
复制
发表时间：
2008
影响因子：
3.2
通讯作者：
N. Fujimura
中科院分区：
文献类型：
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作者：
K. Masuko;A. Ashida;T. Yoshimura;N. Fujimura
我们报道了调制掺杂的ZnMnO：Al scinZnMnO scinZnO异质结构中自旋相关的输运性质。以ZnO（0001）单晶为衬底，制备了表面和界面均为原子级光滑的异质结构。对于Mn含量为12at. %的样品，在ZnMnO与ZnO的界面处发现了电子限制，表明ZnMnO层起到了阻挡层的作用。本文研究了ZnO沟道层中的s电子传导与ZnMnO势垒层中的Mn d自旋之间是否存在s-d交换相互作用。为了消除磁电阻效应中的洛仑兹力和弱局域化效应，在平行于样品表面的磁场下测量了磁电阻。对于ZnMnO scinZnO异质结构，在1.85K下，薄层载流子浓度为5.46 × 1012cm-2，平行场MR显示，在0.8T以下，正MR占主导地位，而在0.8T以上，负MR被识别。阳性MR与Brillou...
We report a spin-dependent transport property in modulation-doped ZnMnO:Al∕ZnMnO∕ZnO heterostructures. Using ZnO (0001¯) single crystal substrates, the heterostructures with atomically smooth surface and interface were prepared. For the sample with the Mn concentration of 12at.%, the electron confinement at the ZnMnO∕ZnO interface was recognized, indicating that ZnMnO layer acted as a barrier layer. In this paper, we investigated if an s-d exchange interaction exists between s electron conducting in the ZnO channel layer and Mn d spin in the ZnMnO barrier layer at the interface. To eliminate the Lorentz force and weak localization effects from the magnetoresistance (MR), the MR was measured under the magnetic field parallel to the sample surface. For a ZnMnO∕ZnO heterostructure with the sheet carrier concentration of 5.46×1012cm−2, at 1.85K, the parallel-field MR revealed that a positive MR was dominant below 0.8T, while a negative MR was recognized above 0.8T. The positive MR was well fitted to a Brillou...
影响因子：
3.2
作者：
T. Edahiro;N. Fujimura;T. Ito
通讯作者：
T. Edahiro;N. Fujimura;T. Ito
影响因子：
3.7
作者：
Andrearczyk, T;Jaroszynski, J;Kawasaki, M
通讯作者：
Kawasaki, M
(000-1)ZnO单晶衬底ZnMnO薄膜的制备及磁性能
DOI：
--
发表时间：
2007
期刊：
Journal of Magnetism and Magnetic Materials 310
影响因子：
--
作者：
K.Masuko;A.Ashida;T.Yoshimura;N.Fujimura
通讯作者：
N.Fujimura