Cation Substitution in Earth-Abundant Kesterite Photovoltaic Materials.
Cation Substitution in Earth-Abundant Kesterite Photovoltaic Materials.
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地球上储量丰富的黄锡矿光伏材料中的阳离子取代
DOI：
10.1002/advs.201700744
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发表时间：
2018-04
期刊：
影响因子：
--
通讯作者：
Zhang Y
中科院分区：
文献类型：
--
作者：
Li J;Wang D;Li X;Zeng Y;Zhang Y
作为低成本和环境友好的薄膜光电池的一个有前途的候选者，新兴的基于锌黄锡矿的Cu2ZnSn（S，Se）4（CZTSSe）太阳能电池在过去十年中经历了快速的发展。然而，CZTSSe太阳能电池的记录效率（12.6%）仍然明显低于其前身Cu（In，Ga）Se2（CIGS）和CdTe薄膜太阳能电池。这一记录保持了好几年。这种停滞的主要障碍一致归因于大的开路电压（V OC）赤字。除了阳离子无序和相关的能带拖尾之外，未钝化的界面缺陷和不期望的能带对准是导致锌黄锡矿太阳能电池中的大V OC不足的另外两个罪魁祸首。为了抓住锌黄锡矿太阳能电池作为未来地球丰富的光伏技术的巨大潜力，目前的研究重点是CZTSSe基材料的阳离子替代。本文的目的是研究最近通过阳离子取代来克服锌黄锡矿太阳能电池的V OC限制的努力，并进一步阐明几种新兴的前瞻性策略，包括：i）通过远距离等电子阳离子取代来抑制阳离子无序，ii）优化结带排列并在吸收体中构建渐变带隙，以及iii）工程化界面缺陷并增强结带弯曲。
As a promising candidate for low‐cost and environmentally friendly thin‐film photovoltaics, the emerging kesterite‐based Cu2ZnSn(S,Se)4 (CZTSSe) solar cells have experienced rapid advances over the past decade. However, the record efficiency of CZTSSe solar cells (12.6%) is still significantly lower than those of its predecessors Cu(In,Ga)Se2 (CIGS) and CdTe thin‐film solar cells. This record has remained for several years. The main obstacle for this stagnation is unanimously attributed to the large open‐circuit voltage (V OC) deficit. In addition to cation disordering and the associated band tailing, unpassivated interface defects and undesirable energy band alignment are two other culprits that account for the large V OC deficit in kesterite solar cells. To capture the great potential of kesterite solar cells as prospective earth‐abundant photovoltaic technology, current research focuses on cation substitution for CZTSSe‐based materials. The aim here is to examine recent efforts to overcome the V OC limit of kesterite solar cells by cation substitution and to further illuminate several emerging prospective strategies, including: i) suppressing the cation disordering by distant isoelectronic cation substitution, ii) optimizing the junction band alignment and constructing a graded bandgap in absorber, and iii) engineering the interface defects and enhancing the junction band bending.
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