Bursts modify electrical synaptic strength.

Bursts modify electrical synaptic strength.
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DOI:
10.1016/j.brainres.2012.05.061
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发表时间:
2012-12-03
期刊:
影响因子:
2.9
通讯作者:
Landisman CE
Landisman CE
中科院分区:
医学3区
文献类型:
--
作者:
Haas JS;Landisman CE

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神经元活动引起的突触强度的变化在化学突触中已经有了非常详细的描述,但是在电突触中自然形式的活动和强度之间的关系以前没有被研究过。丘脑网状核(TRN)是一个富含缝隙连接(电)突触的大脑区域,它调节皮质注意力,启动睡眠纺锤波,并参与唤醒状态之间的转换。TRN中电突触的可塑性可能是这些过程的关键机制。最近,在TRN的电突触中描述了一种新的活动依赖性形式的长期抑制。在这里,我们提供了这些调查结果的概述,并在更广泛的背景下讨论它们。由于间隙连接蛋白在哺乳动物大脑中广泛表达,突触强度的改变可能是整个大脑中电突触的广泛和强大的机制。
Changes in synaptic strength resulting from neuronal activity have been described in great detail at chemical synapses, but the relationship between natural forms of activity and strength at electrical synapses had previously not been investigated. The thalamic reticular nucleus (TRN), a brain area rich in gap junctional (electrical) synapses, regulates cortical attention, initiates sleep spindles, and participates in shifts between states of arousal. Plasticity of electrical synapses in the TRN may be a key mechanism underlying these processes. Recently, a novel activity-dependent form of long-term depression was described at electrical synapses in the TRN. Here we provide an overview of those findings and discuss them in broader context. Because gap junctional proteins are widely expressed in the mammalian brain, modification of synaptic strength is likely to be a widespread and powerful mechanism at electrical synapses across the brain.
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