Bursts modify electrical synaptic strength.
Bursts modify electrical synaptic strength.
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DOI:
10.1016/j.brainres.2012.05.061
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发表时间:
2012-12-03
期刊:
影响因子:
2.9
通讯作者:
Landisman CE
中科院分区:
文献类型:
--
作者:
Haas JS;Landisman CE
Changes in synaptic strength resulting from neuronal activity have been described in great detail at chemical synapses, but the relationship between natural forms of activity and strength at electrical synapses had previously not been investigated. The thalamic reticular nucleus (TRN), a brain area rich in gap junctional (electrical) synapses, regulates cortical attention, initiates sleep spindles, and participates in shifts between states of arousal. Plasticity of electrical synapses in the TRN may be a key mechanism underlying these processes. Recently, a novel activity-dependent form of long-term depression was described at electrical synapses in the TRN. Here we provide an overview of those findings and discuss them in broader context. Because gap junctional proteins are widely expressed in the mammalian brain, modification of synaptic strength is likely to be a widespread and powerful mechanism at electrical synapses across the brain.
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DOI:
10.1523/jneurosci.6216-11.2012
发表时间:
2012-03-28
期刊:
The Journal of neuroscience : the official journal of the Society for Neuroscience
影响因子:
--
作者:
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通讯作者:
Pereda AE
DOI:
10.1017/s1472928807000325
发表时间:
2008-03
期刊:
Thalamus & related systems
影响因子:
--
作者:
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通讯作者:
Crunelli, Vincenzo
DOI:
10.1073/pnas.95.26.15735
发表时间:
1998-12-22
影响因子:
11.1
作者:
Cotrina, ML;Lin, JHC;Nedergaard, M
通讯作者:
Nedergaard, M
影响因子:
16.2
作者:
Dugue, Guillaume P.;Brunel, Nicolas;Dieudonne, Stephane
通讯作者:
Dieudonne, Stephane
影响因子:
2.5
作者:
Haas, Julie S.;Nowotny, Thomas;Abarbanel, H. D. I.
通讯作者:
Abarbanel, H. D. I.