From stannous oxide to stannic oxide epitaxial films grown by pulsed laser deposition with a metal tin target
From stannous oxide to stannic oxide epitaxial films grown by pulsed laser deposition with a metal tin target
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用金属锡靶材进行脉冲激光沉积从氧化亚锡到氧化亚锡外延膜
DOI：
10.1016/j.apsusc.2018.10.043
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发表时间：
2019-02
影响因子：
6.7
通讯作者：
He Yunbin
中科院分区：
文献类型：
--
作者：
Li Mingkai;Zheng Lilan;Zhang Mi;Lin Yinyin;Li Lei;Lu Yinmei;Chang Gang;Klar Peter J.;He Yunbin
二氧化锡（SnO）和二氧化锡（SnO 2）都是重要的宽带隙半导体材料。要详细研究导电机制，高质量的外延膜是必不可少的。在这里，我们提出了一种简单的方法，通过使用脉冲激光沉积与金属锡靶生长高质量的氧化亚锡或氧化锡的外延薄膜上的r-平面蓝宝石衬底。通过调节沉积过程中的氧压来控制锡的价态。避免了金属锡杂质和Sn 3 O 4过渡相的存在，确定了从氧化亚锡到氧化锡的生长窗口。对于单晶SnO外延膜，其摇摆曲线半宽为0.22°，优于YSZ衬底上的0.46°。最小粗糙度分别为0.37 nm和0.84 nm的SnO 2外延膜。SnO和r-蓝宝石衬底之间的外延关系被确定为SnO [1 <$1 0]//蓝宝石[1 <$2 1 <$0]和SnO [1 1 0]//蓝宝石[1 0 1 <$1]。对于SnO 2，外延关系为SnO 2 [0 1 0]//sapphire [1 $> 2 1 <$0]和SnO 2 [1 $> 0 1]//sapphire [1 0 1 <$1]。结合XPS价带谱和光学透射谱推导出的能带图表明SnO的p型带和SnO 2的n型带。拉曼光谱被认为是一个上级指纹的SnO单晶质量，由于其更大的灵敏度比X射线衍射。
Stannous oxide (SnO) and stannic oxide (SnO 2) are both important wide-band-gap semiconductors. To study the conductive mechanism in detail, high quality epitaxial films are essential. Here we propose a simple method to grow high quality epitaxial films of either stannous oxide or stannic oxide on an r-plane sapphire substrate by using pulsed laser deposition with a metallic tin target. The valence state of tin is controlled by tuning the oxygen pressure during the deposition procedure. Metal tin impurities and the transition phase of Sn 3 O 4 are avoided and the growth windows from stannous oxide to stannic oxide are confirmed. For single-crystalline SnO epitaxial film, a rocking curve half-width of 0.22° is obtained, which is better than the 0.46° of that on a YSZ substrate. The minimum roughnesses achieved were 0.37 nm for the SnO 2 epitaxial film and 0.84 nm for the SnO epitaxial film. The epitaxial relationship between SnO and the r-sapphire substrate was determined to be SnO [1¯ 1 0]//sapphire [1¯ 2 1¯ 0] and SnO [1 1 0]//sapphire [1 0 1¯ 1]. For SnO 2, the epitaxial relation is SnO 2 [0 1 0]//sapphire [1¯ 2 1¯ 0] and SnO 2 [1¯ 0 1]//sapphire [1 0 1¯ 1]. The band schematics, deduced by combined XPS valence band spectroscopy and optical transmittance spectroscopy, indicated p-type bands of SnO and n-type bands of SnO 2. Raman spectroscopy is suggested to be a superior fingerprint of SnO single-crystalline quality, due to its greater sensitivity than X-ray diffraction.
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DOI：
10.1209/0295-5075/106/16001
发表时间：
2014-04
期刊：
Europhysics Letters
影响因子：
--
作者：
D. B. Granato;A. Albar;U. Schwingenschlögl
通讯作者：
D. B. Granato;A. Albar;U. Schwingenschlögl
影响因子：
3.2
作者：
J. Perrière;C. Hébert;A. Petitmangin;X. Portier;W. Seiler;M. Nistor
通讯作者：
J. Perrière;C. Hébert;A. Petitmangin;X. Portier;W. Seiler;M. Nistor
影响因子：
3.2
作者：
A. Cabot;J. Arbiol;R. Ferré;J. Morante;F. Chen;Meilin Liu
通讯作者：
A. Cabot;J. Arbiol;R. Ferré;J. Morante;F. Chen;Meilin Liu
DOI：
10.1002/pssa.2210870110
发表时间：
1985-01-01
影响因子：
2
作者：
KRASEVEC, V;PRODAN, A;SULCIC, S
通讯作者：
SULCIC, S
影响因子：
2.1
作者：
Batzill, M;Burst, JM;Diebold, U
通讯作者：
Diebold, U