Graphene-enabled and directed nanomaterial placement from solution for large-scale device integration.
Graphene-enabled and directed nanomaterial placement from solution for large-scale device integration.
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DOI：
10.1038/s41467-018-06604-4
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发表时间：
2018-10-05
影响因子：
16.6
通讯作者：
Steiner M
中科院分区：
文献类型：
--
作者：
Engel M;Farmer DB;Azpiroz JT;Seo JT;Kang J;Avouris P;Hersam MC;Krupke R;Steiner M
以纳米级精度将基于溶液的纳米材料定向放置在预定位置限制了半导体工艺技术中自下而上的集成。我们报告了一种通过具有纳米级沉积位点的大规模石墨烯层从溶液中电场辅助放置纳米材料的方法。结构化石墨烯层通过在标准基底上转移或合成来制备，然后在纳米材料沉积完成后将其去除，产生具有纳米级分辨率的材料组件，覆盖表面积> 1mm2。为了证明其广泛的适用性，我们在预定的基板位置组装了具有代表性的零维、一维和二维半导体，并将它们集成到纳米电子器件中。最终，该方法为工业规模应用的纳米材料自下而上集成开辟了一条途径。将纳米材料放置在预定位置是将其集成到纳米电子器件中的关键要求。在这里，作者设计了一种方法，允许在电场的帮助下使用结构化石墨烯层作为沉积位点来放置基于溶液的纳米材料。
Directed placement of solution-based nanomaterials at predefined locations with nanoscale precision limits bottom-up integration in semiconductor process technology. We report a method for electric-field-assisted placement of nanomaterials from solution by means of large-scale graphene layers featuring nanoscale deposition sites. The structured graphene layers are prepared via either transfer or synthesis on standard substrates, and then are removed once nanomaterial deposition is completed, yielding material assemblies with nanoscale resolution that cover surface areas >1 mm2. In order to demonstrate the broad applicability, we have assembled representative zero-dimensional, one-dimensional, and two-dimensional semiconductors at predefined substrate locations and integrated them into nanoelectronic devices. Ultimately, this method opens a route to bottom-up integration of nanomaterials for industry-scale applications. The placement of nanomaterials at predefined locations is a key requirement for their integration in nanoelectronic devices. Here, the authors devise a method allowing placement of solution-based nanomaterials by using structured graphene layers as deposition sites with the aid of an electric field.
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DOI：
10.1007/s00339-002-1592-4
发表时间：
2003-03-01
影响因子：
2.7
作者：
Krupke, R;Hennrich, F;Lohneysen, HV
通讯作者：
Lohneysen, HV
DOI：
10.1016/j.physe.2007.06.020
发表时间：
2007-12-01
影响因子：
3.3
作者：
Chen, Zhihong;Lin, Yu-Ming;Avouris, Phaedon
通讯作者：
Avouris, Phaedon
影响因子：
56.9
作者：
Lin, Y. -M.;Dimitrakopoulos, C.;Avouris, Ph.
通讯作者：
Avouris, Ph.
影响因子：
17.1
作者：
Duchamp, Martial;Lee, Kyumin;Magrez, Arnaud
通讯作者：
Magrez, Arnaud
影响因子：
5.7
作者：
Seo, Jung-Woo T.;Yoder, Nathan L.;Hersam, Mark C.
通讯作者：
Hersam, Mark C.