Quantitative measurement of local elasticity of SiOx film by atomic force acoustic microscopy
Quantitative measurement of local elasticity of SiOx film by atomic force acoustic microscopy
复制标题
原子力声学显微镜定量测量SiOx薄膜的局部弹性
DOI：
10.1088/1674-1056/19/8/084302
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发表时间：
2010-08
影响因子：
1.7
通讯作者：
Wu Zaiqi
中科院分区：
文献类型：
--
作者：
Wu Bin;Zhang Gaimei;He Cunfu;Wu Zaiqi
本文利用原子力声学显微镜（AFAM）对SiOx薄膜的弹性性能进行了局部定点定量和全区域定性的研究。在AFAM中，样品在超声频率下振动，针尖接触样品表面，分别进行定点和连续测量。采用等离子体增强化学气相沉积（PECVD）技术在硅片上制备了SiOx薄膜。由原子力声学显微镜测量的接触共振谱计算了针尖-SiOx膜的局部接触刚度。采用参考方法，得到了SiOx薄膜的定点压痕模量。当SiOx表面以固定频率激发时，悬臂梁振幅的图像也被可视化和分析。结果表明，声幅图像能较好地反映试样的弹性特性。
In this paper the elastic properties of SiOx film are investigated quantitatively for local fixed point and qualitatively for overall area by atomic force acoustic microscopy (AFAM) in which the sample is vibrated at the ultrasonic frequency while the sample surface is touched and scanned with the tip contacting the sample respectively for fixed point and continuous measurements. The SiOx films on the silicon wafers are prepared by the plasma enhanced chemical vapour deposition (PECVD). The local contact stiffness of the tip-SiOx film is calculated from the contact resonance spectrum measured with the atomic force acoustic microscopy. Using the reference approach, indentation modulus of SiOx film for fixed point is obtained. The images of cantilever amplitude are also visualized and analysed when the SiOx surface is excited at a fixed frequency. The results show that the acoustic amplitude images can reflect the elastic properties of the sample.
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影响因子：
3.5
作者：
Zhao Kunyu;Zeng Hua-Rong;Song Hong-Zhang;Hui Senxing;Li Guorong;Yin Qingrui;K. Shimamura;C. V. Kannan;E. Vı́llora;S. Takekawa;K. Kitamura
通讯作者：
Zhao Kunyu;Zeng Hua-Rong;Song Hong-Zhang;Hui Senxing;Li Guorong;Yin Qingrui;K. Shimamura;C. V. Kannan;E. Vı́llora;S. Takekawa;K. Kitamura
影响因子：
3.2
作者：
S. Asif;K. Wahl;R. Colton;O. Warren
通讯作者：
S. Asif;K. Wahl;R. Colton;O. Warren
DOI：
10.1007/978-3-540-37316-2
发表时间：
2006
期刊：
--
影响因子：
--
作者：
B. Bhushan;H. Fuchs;S. Hosaka
通讯作者：
B. Bhushan;H. Fuchs;S. Hosaka
影响因子：
1.6
作者：
Passeri, D;Bettucci, A;Ciavarella, M
通讯作者：
Ciavarella, M
影响因子：
4.7
作者：
Li, XD;Bhushan, B
通讯作者：
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