Electroluminescence properties of InGaN/GaN multiple quantum well-based LEDs with different indium contents and different well widths.
Electroluminescence properties of InGaN/GaN multiple quantum well-based LEDs with different indium contents and different well widths.
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不同铟含量和不同阱宽的InGaN/GaN多量子阱LED的电致发光特性
DOI：
10.1038/s41598-017-15561-9
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发表时间：
2017-11-10
影响因子：
4.6
通讯作者：
Xu X
中科院分区：
文献类型：
--
作者：
Li C;Ji Z;Li J;Xu M;Xiao H;Xu X
制备了两种不同铟含量和阱宽的InGaN/GaN多量子阱（MQW）基蓝光发光二极管（LED），研究了它们在不同注入电流下的电致发光（EL）谱随温度的变化.结果表明，与铟含量较低、阱宽较大的样品B相比，铟含量较高、阱宽较小的样品A在较低的固定电流下具有更强的载流子局域化效应和更高的外量子效率（EQE）;但随着注入电流的增大，样品A的局域化效应和EQE均以更快的速率下降。前者主要归因于高铟含量引起的较大铟涨落导致的较深的电势能级和较小的阱宽引起的较强的载流子量子限制效应（QCE）;后者主要归因于更小的阱宽和更大的晶格失配引起的更强的压电场引起的电子泄漏和/或电子溢出的更显著的增长，以及由于较小的阱宽引起的较小的高能局域态密度而引起的载流子局域效应的更显著的降低。
Two InGaN/GaN multiple quantum well (MQW)-based blue light emitting diodes (LEDs) emitting photons at approximately the same wavelength, with different indium contents and well widths, are prepared, and the temperature-dependences of their electroluminescence (EL) spectra at different fixed injection currents are investigated. The results show that, compared with sample B with its lower indium content and larger well width, sample A with its higher indium content and smaller well width, has a stronger carrier localization effect and higher external quantum efficiency (EQE) at the lower fixed currents; however, upon increasing the injection current, both the localization effect and EQE for sample A decrease at a faster rate. The former is mainly attributed to the deeper potential levels due to the larger indium fluctuations originating from the higher indium content, and to the smaller well width-induced stronger carrier quantum-confine effect (QCE); the latter is mainly attributed to the more significant growing in the electron leakage and/or electron overflow originating from the smaller well width and larger lattice mismatch-induced stronger piezoelectric field, and to the more significant reduction in carrier localization effect originating from the smaller well width-induced smaller density of high-energy localized states.
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