Properties of rare earth doped thin film dielectric layers for upconversion laser waveguides
Properties of rare earth doped thin film dielectric layers for upconversion laser waveguides
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用于上转换激光波导的稀土掺杂薄膜介电层的特性
DOI：
10.1117/12.883187
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发表时间：
2011
期刊：
影响因子：
--
通讯作者：
Pearce S
中科院分区：
文献类型：
--
作者：
Pearce S
在富氧环境下，利用反应溅射技术，在未加热的<100>取向硅衬底上制备了掺杂铒的五氧化二钽薄膜，并在衬底上生长了2 μm厚的SiO2层，用于上转换激光实验。采用离子束辅助反应法制备了钽和铒金属靶材，制备了高质量的非晶薄膜层。通过改变相对沉积速率来调节掺铒浓度。高温退火前的平板波导损耗在633 nm处为0.8 dB/cm， 500℃退火后为0.5 dB/cm。采用光刻和反应离子刻蚀的方法在沉积的薄膜板波导上刻蚀微米尺度的波导。最后，在脊状波导的顶部沉积二氧化硅缓冲层，以帮助收缩激光模式并增加保护层。对2 cm长的波导样品进行了切割和抛光，以获得良好的光学质量，用于激光实验。对最终波导进行了上转换效率和激光增益测量。最终脊波导的波导损耗为6.35 dB/cm，耦合效率为48%。使用泵浦探针光学装置上转换到551nm时，测量到0.25 dB的正净增益。
Thin films of erbium doped tantalum pentoxide were prepared on unheated <100> orientated silicon substrates with a thermally grown 2 μm thick SiO2 layer using reactive sputtering in an oxygen rich environment for upconversion laser experiments. Tantalum and Erbium metal targets were co-sputtered using an ion beam assisted reactive process to produce the high quality amorphous thin film layers. The Erbium dopant concentration was adjusted by varying the relative deposition rate. Slab waveguide loss before high temperature annealing was measured to be 0.8 dB/cm at 633 nm which reduced to 0.5 dB/cm after annealing at 500 °C. Micron scale waveguides were etched into the deposited thin film slab waveguides using photolithography and reactive ion etching. Finally a silicon dioxide buffer layer was deposited on top of the ridge waveguides to help constrict the laser mode and to add a protective layer. 2 cm long waveguide samples were cleaved and polished to achieve good optical quality end facets for laser experiments. Upconversion efficiency and laser gain measurements were performed on the final waveguides. Waveguide losses of 6.35 dB/cm were measured for the final ridge waveguides and a coupling efficiency of 48 % was obtained. A positive net gain of 0.25 dB was measured for upconversion to 551 nm using a pump probe optical setup.
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