Hide-and-Seek: Hiding Secrets in Threshold Voltage Distributions of NAND Flash Memory Cells

Hide-and-Seek: Hiding Secrets in Threshold Voltage Distributions of NAND Flash Memory Cells
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捉迷藏:隐藏 NAND 闪存单元阈值电压分布的秘密

DOI:
10.1145/3599691.3603415
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发表时间:
2023
期刊:
Proceedings of the 15th ACM Workshop on Hot Topics in Storage and File Systems
影响因子:
--
通讯作者:
Ray, Biswajit
Ray, Biswajit
中科院分区:
--
文献类型:
--
作者:
Raquibuzzaman, Md;Milenkovic, Aleksandar;Ray, Biswajit

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本文提出了一种利用编程存储单元的阈值电压变化来隐藏秘密信息的新的页面写入技术。我们利用常见的用户模式命令在最先进的商用3D NAND闪存芯片上演示了所提出的技术。我们探讨了数据隐藏的设计空间度量:公开和秘密数据的比特精确度和持有秘密数据的可检测性。该方法在保证恢复的秘密数据准确率达到97%以上的同时,对公开数据的准确率损失可以忽略不计。我们的分析表明,该技术在阈值电压分布中引入了可以忽略的失真。这些失真低于编程状态的固有阈值电压变化。因此,提出的方法提供了一种隐藏技术,即使是具有低级别访问内存芯片的强大对手也无法检测到。
In this paper, we propose a new page-writing technique to hide secret information using the threshold voltage variation of programmed memory cells. We demonstrate the proposed technique on the state-of-the-art commercial 3D NAND flash memory chips by utilizing common user mode commands. We explore the design space metrics of interest for data hiding: bit accuracy of public and secret data and detectability of holding secret data. The proposed method ensures more than 97% accuracy of recovered secret data, with negligible accuracy loss in the public data. Our analysis shows that the proposed technique introduces negligible distortions in the threshold voltage distributions. These distortions are lower than the inherent threshold voltage variations of program states. As a result, the proposed method provides a hiding technique that is undetectable, even by a powerful adversary with low-level access to the memory chips.
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