Titanium Dioxide Engineered for Near-dispersionless High Terahertz Permittivity and Ultra-low-loss.
Titanium Dioxide Engineered for Near-dispersionless High Terahertz Permittivity and Ultra-low-loss.
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DOI：
10.1038/s41598-017-07019-9
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发表时间：
2017-07-26
影响因子：
4.6
通讯作者：
Yan H
中科院分区：
文献类型：
--
作者：
Yu C;Zeng Y;Yang B;Donnan R;Huang J;Xiong Z;Mahajan A;Shi B;Ye H;Binions R;Tarakina NV;Reece MJ;Yan H
实现低成本、低介电损耗、近无色散宽带、高介电常数的工程陶瓷作为高性能太赫兹（THz）衬底材料的要求极高。此类基板被部署在例如用于合成非平面和3D结构并将其转换为平面形式的集成电路中。金红石形式的二氧化钛 (TiO2) 已被广泛接受为商业上经济的候选基材，可满足亚太赫兹频段低损耗和高介电常数的要求。然而，从未系统地研究其介电响应机制与微结构之间的关系，以设计超低介电损耗和高值、无色散介电常数。在这里，我们展示了具有高介电常数（约 102.30）和超低损耗（约 0.0042）的 TiO2 太赫兹电介质。这些是通过广泛使用材料表征方法收集的见解来准备的，以成功地设计烧结过程中的孔隙率、第二相、晶体学剪切面和氧空位。这里实现的介电损耗不仅在 0.2-0.8THz 范围内的色散可以忽略不计，而且还具有已知高介电常数电介质测量的最低值。我们预计这项研究提供的见解将支持亚波长级平面集成电路、紧凑型高 Q 谐振器和太赫兹频段宽带慢光器件的发展。
Realising engineering ceramics to serve as substrate materials in high-performance terahertz(THz) that are low-cost, have low dielectric loss and near-dispersionless broadband, high permittivity, is exceedingly demanding. Such substrates are deployed in, for example, integrated circuits for synthesizing and converting nonplanar and 3D structures into planar forms. The Rutile form of titanium dioxide (TiO2) has been widely accepted as commercially economical candidate substrate that meets demands for both low-loss and high permittivities at sub-THz bands. However, the relationship between its mechanisms of dielectric response to the microstructure have never been systematically investigated in order to engineer ultra-low dielectric-loss and high value, dispersionless permittivities. Here we show TiO2 THz dielectrics with high permittivity (ca. 102.30) and ultra-low loss (ca. 0.0042). These were prepared by insight gleaned from a broad use of materials characterisation methods to successfully engineer porosities, second phase, crystallography shear-planes and oxygen vacancies during sintering. The dielectric loss achieved here is not only with negligible dispersion over 0.2–0.8 THz, but also has the lowest value measured for known high-permittivity dielectrics. We expect the insight afforded by this study will underpin the development of subwavelength-scale, planar integrated circuits, compact high Q-resonators and broadband, slow-light devices in the THz band.
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DOI：
10.1143/jjap.45.7499
发表时间：
2006-09-01
期刊：
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS
影响因子：
--
作者：
Matsumoto, Naolci;Nakagawa, Takuji;Sakabe, Yukio
通讯作者：
Sakabe, Yukio
影响因子：
2.7
作者：
PARKER, JC;SIEGEL, RW
通讯作者：
SIEGEL, RW
影响因子：
41.2
作者：
Hu, Wanbiao;Liu, Yun;Wong-Leung, Jennifer
通讯作者：
Wong-Leung, Jennifer
DOI：
10.1109/tmtt.2005.845752
发表时间：
2005-04-01
影响因子：
4.3
作者：
Berdel, K;Rivas, JG;Kurz, H
通讯作者：
Kurz, H
影响因子：
3.2
作者：
Kamba, S;Petzelt, J;Mohanan, P
通讯作者：
Mohanan, P