A cellular automata simulation of atomic layer etching
A cellular automata simulation of atomic layer etching
复制标题
原子层蚀刻的元胞自动机模拟
DOI：
10.1117/12.2297435
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发表时间：
2018
期刊：
影响因子：
--
通讯作者：
Strotmann, Jan
中科院分区：
文献类型：
--
作者：
Bonnecaze, Roger T.;Chopra, Meghali J.;Strotmann, Jan
提出了原子层刻蚀(ALE)的二维元胞自动机模型，并利用该模型预测了不同表面的刻蚀速率和粗糙度随ALE过程中吸附和去除步骤的效率或概率的变化。要蚀刻的材料的原子最初被放置在几层厚的二维阵列中。蚀刻遵循ALE的两个步骤。首先，假设初始反应步骤(例如，氯与硅的反应)以100%的效率发生，以激活暴露的表面原子；也就是说，所有暴露的原子与蚀刻气体反应。第二个反应步骤(例如，Ar离子轰击或溅射)的效率被认为是根据表面原子相对于其邻近原子的暴露和轰击强度而变化的。对于足够高的轰击或溅射，也可以去除激活表面原子以下的原子，这使得每个ALE周期的刻蚀速率超过一层。第二步去除效率的界限是从实验测量和文献中完全详细的分子动力学模拟中提取的。随着Ar离子轰击强度的增加，刻蚀速率与表面粗糙度之间存在权衡关系。
A two-dimensional, cellular automata model for atomic layer etching (ALE) is presented and used to predict the etch rate and the evolution of the roughness of various surfaces as a function of the efficiencies or probabilities of the adsorption and removal steps in the ALE process. The atoms of the material to be etched are initially placed in a two-dimensional array several layers thick. The etch follows the two step process of ALE. First, the initial reaction step (e.g., Cl reacting with Si) is assumed to occur at 100% efficiency activating the exposed, surface atoms; that is, all exposed atoms react with the etching gas. The second reaction step (e.g., Ar ion bombardment or sputtering) occurs with efficiencies that are assumed to vary depending on the exposure of the surface atoms relative to their neighbors and on the strength of bombardment. For sufficiently high bombardment or sputtering, atoms below the activated surface atoms can also be removed, which gives etch rates greater than one layer per ALE cycle. The bounds on the efficiencies of the second removal step are extracted from experimental measurements and fully detailed molecular dynamics simulations from the literature. A trade-off is observed between etch rate and surface roughness as the Ar ion bombardment is increased.
影响因子：
1.4
作者：
Athavale, SD;Economou, DJ
通讯作者：
Economou, DJ
影响因子：
2.9
作者：
Huard, Chad M.;Zhang, Yiting;Kushner, Mark J.
通讯作者：
Kushner, Mark J.
交替氯吸附和Ar+离子辐照对Si的自限层刻蚀
影响因子：
4
作者：
T. Matsuura;J. Murota;Y. Sawada;T. Ohmi
通讯作者：
T. Ohmi